Semiconductors
IRF2807PBF
N-Channel Power MOSFET, 75V drain-source voltage, 82A continuous drain current, and 0.013 ohm maximum on-resistance. Features a TO-220AB through-hole package, 230W maximum power dissipation, and operates from -55°C to 175°C. Includes 3.82nF input capacitance and 49ns turn-off delay. RoHS compliant and lead-free.
IRF3205
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IRF3710PBF
This N-channel silicon power MOSFET is rated for 100 V drain-to-source voltage and 57 A continuous drain current at 25°C case temperature. It is specified with a maximum drain-to-source on-resistance of 23 mΩ at VGS = 10 V and uses the TO-220AB through-hole package. The device supports operation from -55°C to 175°C and is fully avalanche rated with fast switching characteristics. The datasheet also identifies dynamic dv/dt capability and lead-free construction for industrial applications.
IRF4905
Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IRF520
N-Channel Power MOSFET featuring 100V Drain-Source Voltage (Vdss) and 9.2A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 270mΩ Drain-Source On-Resistance (Rds On) and a maximum power dissipation of 60W. Designed for through-hole mounting in a TO-220AB package, it exhibits fast switching characteristics with a turn-on delay of 8.8ns and a fall time of 20ns. Operating temperature range spans from -55°C to 175°C.
IRF530
N-channel MOSFET with 100V drain-source voltage and 14A continuous drain current. Features 160mΩ maximum drain-source on-resistance and 88W power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220AB through-hole mount, this component offers fast switching with turn-on delay of 10ns and fall time of 24ns.
IRF530N
The IRF530N is a discrete N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current rating of 17A and a power dissipation of 70W. The device is packaged in a TO-220AB package with a 3-pin configuration and is designed for through-hole mounting. The IRF530N is not RoHS compliant.
IRF540
N-channel TrenchMOS transistor | MOSFET N-CH 100V 28A TO-220AB
IRF540N
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IRF540NS
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
IRF640N
The IRF640N is a 200V N-Channel MOSFET with a continuous drain current of 18A. It features a TO-220AB package with a flange mount, suitable for through-hole mounting. The device operates over a temperature range of -55°C to 175°C and has a maximum power dissipation of 150W. The IRF640N is not RoHS compliant.
IRF730PBF
N-Channel Power MOSFET, TO-220AB package, featuring 400V Drain-Source Breakdown Voltage and 5.5A Continuous Drain Current. Offers a low 1-ohm Drain-Source On-Resistance and 74W Max Power Dissipation. Designed for through-hole mounting, this silicon Metal-oxide Semiconductor FET operates within a -55°C to 150°C temperature range and is RoHS compliant. Key switching characteristics include a 10ns Turn-On Delay Time and 14ns Fall Time.
IRF740PBF
The IRF740PbF is a single-channel, N-channel enhancement mode power MOSFET with a maximum drain source voltage of 400V and a maximum continuous drain current of 10A. It has a maximum gate source voltage of ±20V and a maximum gate threshold voltage of 4V. The device has a maximum drain source resistance of 550 ohms at 10V and a typical gate charge of 63nC at 10V. The IRF740PbF is packaged in a TO-220AB package and has a typical output capacitance of 330pF. It operates over a temperature range of -55°C to 150°C.
IRF830
N-channel enhancement mode power MOSFET featuring 500V maximum drain-source voltage and 4.5A continuous drain current. This single-element silicon transistor is housed in a 3-pin TO-220 package with through-hole mounting. Key specifications include a maximum drain-source resistance of 1500 mOhm at 10V and a typical gate charge of 22 nC at 10V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 75W.
IRF840
N-channel MOSFET transistor featuring a 500V drain-source breakdown voltage and 8A continuous drain current. This through-hole component offers a low 850mΩ drain-source on-resistance and 125W maximum power dissipation. Operating across a wide temperature range from -55°C to 150°C, it includes fast switching characteristics with turn-on delay of 14ns and fall time of 20ns. Housed in a TO-220AB package, it supports up to 20V gate-to-source voltage.
IRF840PBF
N-Channel Power MOSFET, TO-220AB package, featuring 500V drain-source breakdown voltage and 8A continuous drain current. This silicon metal-oxide semiconductor FET offers 0.85 ohm drain-source resistance and 125W maximum power dissipation. With a nominal gate-source threshold voltage of 4V and a maximum gate-source voltage of 20V, it includes fast switching characteristics with turn-on delay of 14ns and fall time of 20ns. Designed for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C.
IRF9530
P-channel power MOSFET transistor with a DC rated voltage of -100V and continuous drain current of 12A. Features a low Rds On of 300mR, maximum power dissipation of 88W, and operates within a temperature range of -55°C to 175°C. Packaged in a TO-220AB through-hole mount, this component offers fast switching speeds with turn-on delay of 12ns and fall time of 39ns.
IRF9540
P-channel MOSFET featuring a -100V drain-source voltage and 19A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 200mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 150W. Key switching characteristics include a 17ns turn-on delay and 34ns turn-off delay.
IRF9540N
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IRFB3077PBF
Transistor Polarity:N Channel