International Rectifier
IR2110STRPBF
High-side and low-side MOSFET driver IC, featuring two independent channels for half-bridge applications. Delivers 2.5A peak output current with a 20V maximum output voltage. Operates across a wide temperature range of -40°C to 125°C, with a maximum power dissipation of 1.25W. Surface mountable in a 16-pin SOIC package, offering 150ns propagation delay and 10ns turn-on/off delay times. Lead-free and RoHS compliant.
IRF1404
Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IRF1404PBF
The IRF1404PBF is a TO-220AB packaged MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 202A and a drain to source voltage of 40V. The device is RoHS compliant and has a maximum power dissipation of 333W.
IRF2807
Power Field-Effect Transistor, 82A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IRF2807PBF
N-Channel Power MOSFET, 75V drain-source voltage, 82A continuous drain current, and 0.013 ohm maximum on-resistance. Features a TO-220AB through-hole package, 230W maximum power dissipation, and operates from -55°C to 175°C. Includes 3.82nF input capacitance and 49ns turn-off delay. RoHS compliant and lead-free.
IRF3205
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IRF4905
Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IRF530N
The IRF530N is a discrete N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current rating of 17A and a power dissipation of 70W. The device is packaged in a TO-220AB package with a 3-pin configuration and is designed for through-hole mounting. The IRF530N is not RoHS compliant.
IRF540NS
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
IRF640N
The IRF640N is a 200V N-Channel MOSFET with a continuous drain current of 18A. It features a TO-220AB package with a flange mount, suitable for through-hole mounting. The device operates over a temperature range of -55°C to 175°C and has a maximum power dissipation of 150W. The IRF640N is not RoHS compliant.
IRF9540N
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IRFB3077PBF
Transistor Polarity:N Channel
IRFB3206PBF
N-Channel Power MOSFET featuring 60V drain-source voltage and 210A continuous drain current. Offers low 3mΩ drain-source on-resistance and 300W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C and is RoHS compliant. Key electrical characteristics include 6.54nF input capacitance and 4V threshold voltage.
IRFB3306PBF
The IRFB3306PBF is a 60V MOSFET with a continuous drain current of 160A and a maximum power dissipation of 230W. It has a drain-source on resistance of 4.2MR and a threshold voltage of 4V. The device is packaged in a TO-220AB lead free package and is suitable for through hole mounting. The operating temperature range is from -55°C to 175°C.
IRFB3607PBF
The IRFB3607PBF is an N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 80A and a drain-source voltage of 75V. The device has a maximum power dissipation of 140W and a gate to source voltage of 20V. It is available in a TO-220AB package with a lead-free termination and is RoHS compliant.
IRFB3806PBF
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
IRFB4110PBF
N-Channel Power MOSFET, 100V drain-source voltage, 180A continuous drain current, and 4.5mΩ maximum drain-source on-resistance. This silicon, metal-oxide semiconductor FET features a TO-220AB package with through-hole mounting and a maximum power dissipation of 370W. Operating temperature range is -55°C to 175°C, with a gate-source voltage of 20V. RoHS compliant and lead-free.
IRFB4115PBF
The IRFB4115PBF is a TO-220AB packaged N-channel power MOSFET with a maximum drain current of 104A and a maximum drain-source voltage of 150V. It features a maximum on-resistance of 11 milliohms and a maximum power dissipation of 380W. The device operates over a temperature range of -55°C to 175°C and is RoHS compliant. The IRFB4115PBF is suitable for high-power switching applications.
IRFB4227PBF
N-Channel Power MOSFET, TO-220AB package, offering a 200V drain-source voltage (Vdss) and a continuous drain current (ID) of 65A. Features a low 24mΩ maximum drain-source on-resistance and a 330W maximum power dissipation. Operates across a wide temperature range from -40°C to 175°C. Includes a 5V nominal gate-source voltage (Vgs) and a 30V maximum gate-source voltage. This through-hole mounted component is RoHS compliant and lead-free.
IRFB4310PBF
The IRFB4310PBF is a 100V power MOSFET with a continuous drain current rating of 130A and a maximum operating temperature range of -55°C to 175°C. It features a low drain-source on resistance of 7mΩ and a high current rating of 140A. The device is packaged in a TO-220AB flange mount package and is compliant with RoHS regulations. It is suitable for high-power applications requiring a high level of reliability and performance.