IRF1404
Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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About IRF1404
The International Rectifier IRF1404 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN. Key parameters include Continuous Drain Current (ID): 202A, Gate to Source Voltage (Vgs): 20V, Max Operating Temperature: 175°C, Min Operating Temperature: -55°C, and Mount: Through Hole. IRF1404 is manufactured by International Rectifier as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- International Rectifier
- Category
- Semiconductors
- File Size
- 186 KB
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Parameters
| Continuous Drain Current (ID) | 202A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package/Case | TO-220AB |
| Power Dissipation | 333W |
| RoHS | Not Compliant |
| RoHS Compliant | No |