International Rectifier
IRFB4321PBF
The IRFB4321PBF is a TO-220AB lead free MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 85A and a drain to source voltage of 150V. The device is RoHS compliant and has a maximum power dissipation of 350W.
IRFB4410PBF
N-Channel Power MOSFET featuring 100V drain-source voltage and 88A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 10mΩ on-state resistance and 200W power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is lead-free and RoHS compliant. Key switching parameters include a 24ns turn-on delay and 50ns fall time.
IRFB4710PBF
N-Channel Power MOSFET, 100V drain-source voltage, 75A continuous drain current, and 0.014 ohm maximum drain-source on-resistance. Features a TO-220AB through-hole package, 200W maximum power dissipation, and operates from -55°C to 175°C. Includes 6.16nF input capacitance and 35ns turn-on delay time. RoHS compliant and lead-free.
IRFB7534PBF
The IRFB7534PBF is a power MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a continuous drain current of 195A and a drain to source voltage of 60V. The device is packaged in a TO-220AB case and is designed for through-hole mounting. It is lead-free and RoHS compliant, with a maximum power dissipation of 294W.
IRFB7540PBF
The IRFB7540PBF is a power MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current rating of 110A and a drain to source voltage rating of 60V. The device is packaged in a TO-220AB case and is mounted through a hole. It has a maximum power dissipation of 99W and is RoHS compliant.
IRFB7546PBF
INTERNATIONAL RECTIFIER IRFB7546PBF MOSFET Transistor, N Channel, 75 A, 60 V, 0.006 ohm, 10 V, 3.7 V
IRFB7734PBF
The IRFB7734PBF is a power MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 183A and a gate to source voltage of 20V. The device is packaged in a TO-220AB case and is mounted through a hole. The IRFB7734PBF is lead free and RoHS compliant, and meets the requirements of the Reach SVHC directive. It has an input capacitance of 10.15nF and a maximum power dissipation of 290W.
IRFP260N
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN
IRFP2907
The IRFP2907 is a single-element power MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current rating of 209A and a drain-to-source breakdown voltage of 75V. The device is not RoHS compliant and contains lead. It is designed for through-hole mounting and has a power dissipation rating of 470W.
IRFP4468PBF
N-Channel Power MOSFET, 100V Drain-Source Voltage, 290A Continuous Drain Current, and 0.0026 ohm Drain-Source On-Resistance. Features a TO-247AC package for through-hole mounting, 520W maximum power dissipation, and a maximum operating temperature of 175°C. Includes 52ns turn-on delay and 160ns turn-off delay. RoHS compliant and lead-free.
IRFP90N20DPBF
N-Channel Power MOSFET featuring 200V drain-source voltage and 94A continuous drain current. Offers low 23mΩ on-state resistance and 580W maximum power dissipation. Designed for through-hole mounting in a TO-247AC package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 23ns and turn-off delay of 43ns.
IRFS7530TRLPBF
The IRFS7530TRLPBF is a surface mount power MOSFET from International Rectifier, packaged in the D2PAK case. It can handle a maximum operating temperature of 175°C and a minimum of -55°C. The device has a maximum power dissipation of 375W and a continuous drain current of 195A. The gate to source voltage is 20V. The MOSFET has an input capacitance of 13.703nF and is lead free. It is RoHS compliant.
IRFZ44E
Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IRG4BC30W
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
IRG4BC40W
The IRG4BC40W is a 600V insulated gate bipolar transistor with a maximum collector current of 40A. It is packaged in a TO-220-3 flange mount configuration and is available in quantities of 50. The device is not RoHS compliant. The transistor has a maximum power dissipation of 160W and a collector emitter breakdown voltage of 600V.
IRG4PC50W
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN
IRL2203
The IRL2203NPBF is a 30V 116A power MOSFET packaged in a TO-220AB through hole package. It has a maximum operating temperature range of -55°C to 175°C and a maximum power dissipation of 180W. The device is RoHS compliant and lead free. It has a low on-resistance of 7mR and fast switching times of 11ns and 23ns.
IRL2203NPBF
30V 116A TO-220AB Through Hole HEXFET Power MOSFET
IRLR024NTRPBF
N-Channel Power MOSFET, TO-252 package, offering 55V drain-source voltage and 17A continuous drain current. Features low 80mΩ maximum drain-source on-resistance at a nominal 2V gate-source voltage. Operates across a wide temperature range from -55°C to 175°C with 45W maximum power dissipation. This surface-mount device includes fast switching characteristics with 7.1ns turn-on and 20ns turn-off delay times.
IRLR2905TRPBF
N-Channel Power MOSFET, DPAK package, offering 55V DC rated voltage and 42A continuous drain current. Features low on-resistance of 0.03ohm and 110W maximum power dissipation. Designed for surface mounting with a compact DPAK footprint (6.73mm L x 6.22mm W x 2.39mm H). Operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 11ns and fall time of 15ns. Lead-free and RoHS compliant.