AON6912A

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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About AON6912A

The Alpha & Omega AON6912A Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET. Key parameters include Continuous Drain Current (ID): 13.8A, Drain to Source Voltage (Vdss): 30V, FET Type: 2 N-Channel, Input Capacitance: 910pF, and Max Operating Temperature: 150°C. AON6912A is manufactured by Alpha & Omega as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Alpha & Omega
Category
Semiconductors
File Size
549 KB

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Parameters

Continuous Drain Current (ID)13.8A
Drain to Source Voltage (Vdss)30V
FET Type2 N-Channel
Input Capacitance910pF
Max Operating Temperature150°C
Max Power Dissipation2.1W
Min Operating Temperature-55°C
MountSurface Mount
Package/CaseDFN
PackagingTape and Reel
Rds On Max13.7mR
RoHSCompliant
RoHS CompliantYes