AON7934
The AON7934 is a dual N-channel enhancement MOSFET from Alpha & Omega. It is packaged in a DFN-A EP package and features two channels with maximum drain source voltages of 30V. The maximum continuous drain currents are 16A for Q1 and 18A for Q2. The maximum gate source voltage is ±20V. The typical gate charge is 8nC at 10V for Q1 and 12.9nC at 10V for Q2. The maximum power dissipation is 23,000mW for Q1 and 25,000mW for Q2. The operating temperature range is from -55°C to 150°C.
Similar Components
AO4420
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOIC-8
AO4410
Transistor
AON7418
N-channel MOSFET transistor featuring 30V drain-source voltage and 50A continuous drain current. Surface mount component with 1.7mΩ maximum on-resistance and 2.994nF input capacitance. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 6.2W. RoHS compliant and supplied in cut tape packaging.
AON7200
The AON7200 is a surface mount N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a maximum power dissipation of 62W and a maximum drain to source voltage of 30V. The device has a continuous drain current of 40A and an input capacitance of 1.3nF. The AON7200 is packaged in a DFN package and is RoHS compliant.
AO3407A
P-Channel MOSFET, TO-236-3 package, offering a 30V drain-to-source voltage and 4.3A continuous drain current. Features 48mΩ Rds On Max, 1.4W power dissipation, and 830pF input capacitance. Designed for surface mount applications, this single-element silicon transistor operates from -55°C to 150°C and is RoHS compliant and lead-free.
AO4606
Transistor
About AON7934
The Alpha & Omega AON7934 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The AON7934 is a dual N-channel enhancement MOSFET from Alpha & Omega. It is packaged in a DFN-A EP package and features two channels with maximum drain source voltages of 30V. The maximum continuous drain currents are 16A for Q1 and 18A for Q2. The maximum gate source voltage is ±20V. The typical gate charge is 8nC at 10V for Q1 and 12.9nC at 10V for Q2. The maximum power dissipation is 23,000mW for Q1 and 25,000mW for Q2. The operating temperature range is from -55°C to 150°C.. Key parameters include Cage Code: 6USE7, Category: Power MOSFET, Channel Mode: Enhancement, Channel Type: N, and Configuration: Dual. AON7934 is manufactured by Alpha & Omega as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Alpha & Omega
- Category
- Semiconductors
Ask AI Assistant
Ask questions about AON7934 specifications
Click to ask a quick question:
Parameters
| Cage Code | 6USE7 |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| ECCN | EAR99 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Maximum Continuous Drain Current | 16@Q 1|18@Q 2A |
| Maximum Drain Source Resistance | 10.2@10V@Q 1|7.7@10V@Q 2mOhm |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation | 23000@Q 1|25000@Q 2mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Number of Elements per Chip | 2 |
| Package/Case | DFN-A EP |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Schedule B | 8541290080 |
| Typical Gate Charge @ 10V | 8@Q 1|12.9@Q 2nC |
| Typical Gate Charge @ Vgs | 8@10V|[email protected]@Q 1|12.9@10V|[email protected]@Q 2nC |
| Typical Input Capacitance @ Vds | 485@15V@Q 1|807@15V@Q 2pF |