AO3407A
P-Channel MOSFET, TO-236-3 package, offering a 30V drain-to-source voltage and 4.3A continuous drain current. Features 48mΩ Rds On Max, 1.4W power dissipation, and 830pF input capacitance. Designed for surface mount applications, this single-element silicon transistor operates from -55°C to 150°C and is RoHS compliant and lead-free.
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About AO3407A
The Alpha & Omega AO3407A Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: P-Channel MOSFET, TO-236-3 package, offering a 30V drain-to-source voltage and 4.3A continuous drain current. Features 48mΩ Rds On Max, 1.4W power dissipation, and 830pF input capacitance. Designed for surface mount applications, this single-element silicon transistor operates from -55°C to 150°C and is RoHS compliant and lead-free.. Key parameters include Continuous Drain Current (ID): 4.3A, Drain to Source Voltage (Vdss): 30V, Input Capacitance: 830pF, Lead Free: Lead Free, and Max Operating Temperature: 150°C. AO3407A is manufactured by Alpha & Omega as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Alpha & Omega
- Category
- Semiconductors
- File Size
- 488 KB
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Parameters
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 830pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.4W |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package/Case | TO-236-3 |
| Packaging | Cut Tape |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 48mR |
| RoHS | Compliant |
| RoHS Compliant | Yes |