EPC2052
The EPC2052 is a 100 V, 13.5 mΩ enhancement-mode gallium nitride (eGaN) power transistor designed for high-efficiency power conversion. It features a compact 1.5 mm x 1.5 mm die footprint and zero reverse recovery (QRR) charge. This FET is optimized for high-frequency switching applications including 48 V servers, LiDAR, motor drives, Class-D audio, and LED lighting. It is supplied in a passivated die form with solder bumps, offering high power density and superior thermal performance.
Similar Components
GBJ2506A
The GBJ2506 bridge rectifier from Diodes is a single-element device with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a maximum repetitive reverse voltage of 600V and a maximum reverse current of 10uA. The device is packaged in a 4-pin plastic package and is available in quantities of 15. The GBJ2506 is not RoHS compliant, but is Reach SVHC compliant.
24LC256-I/SN
256Kb Serial EEPROM memory, organized as 32K x 8, features a 2-Wire/I2C interface with a maximum frequency of 400kHz. This non-volatile memory offers a fast access time of 900ns and operates with supply voltages ranging from 2.5V to 5.5V. The component is housed in a lead-free, RoHS-compliant SOIC package suitable for surface mounting. Write protection is supported, and it has a maximum write cycle time of 5ms.
BK/ATM-4
This 32V 4A lead-free fuse holder is designed for use with fuses in a variety of applications. It measures 10.92mm in length, 3.81mm in width, and 8.81mm in depth. The holder is packaged in bulk quantities of 500 pieces and is compliant with ROHS standards. The maximum voltage rating is 32V DC, and the current rating is 4A.
PESD0603-240
Surface mount varistor designed for ESD protection. Features a 24V operating supply voltage and 24V DC rated voltage, with a reverse standoff voltage of 24V. Offers a maximum clamping voltage of 45V and a low leakage current of 10uA. Packaged in a 0603 chip size with a capacitance of 0.25pF. Bidirectional operation and RoHS compliant.
0LEB0AJSX
In-Line Watertight Fuse Holder
BAV99
Ultra-fast switching diode with 70V reverse voltage and 200mA average rectified current. Features 1.5pF capacitance and 6ns reverse recovery time. Packaged in a SOT-23 surface mount case with tin, matte contact plating. Operates from -55°C to 150°C with 350mW power dissipation. RoHS compliant and lead-free.
About EPC2052
The EPC (Efficient Power Conversion) EPC2052 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The EPC2052 is a 100 V, 13.5 mΩ enhancement-mode gallium nitride (eGaN) power transistor designed for high-efficiency power conversion. It features a compact 1.5 mm x 1.5 mm die footprint and zero reverse recovery (QRR) charge. This FET is optimized for high-frequency switching applications including 48 V servers, LiDAR, motor drives, Class-D audio, and LED lighting. It is supplied in a passivated die form with solder bumps, offering high power density and superior thermal performance.. Key parameters include Continuous Drain Current (ID): 8.2A, Die Size: 1.5 x 1.5mm, Drain-to-Source Resistance (RDS(on)): 13.5mΩ, Drain-to-Source Voltage (VDS): 100V, and Gate-to-Source Voltage (VGS): -4 to 6V. EPC2052 is manufactured by EPC (Efficient Power Conversion) as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- EPC (Efficient Power Conversion)
- Category
- Semiconductors
- File Size
- 1 MB
Ask AI Assistant
Ask questions about EPC2052 specifications
Click to ask a quick question:
Parameters
| Continuous Drain Current (ID) | 8.2A |
| Die Size | 1.5 x 1.5mm |
| Drain-to-Source Resistance (RDS(on)) | 13.5mΩ |
| Drain-to-Source Voltage (VDS) | 100V |
| Gate-to-Source Voltage (VGS) | -4 to 6V |
| Halogen-free | Yes |
| Input Capacitance (CISS) | 441pF |
| Operating Temperature (TJ) | -40 to 150°C |
| Output Capacitance (COSS) | 195pF |
| Pulsed Drain Current (ID, pulsed) | 74A |
| REACH | Compliant (REACH Unaffected) |
| Reverse Recovery Charge (QRR) | 0nC |
| RoHS | Compliant (RoHS 3) |
| Thermal Resistance, Junction-to-Case (RθJC) | 2°C/W |
| Total Gate Charge (QG) | 4.5nC |