AO4407A
P-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in an SOIC-8 package. Features a continuous drain current of 12A and a drain-to-source voltage of 30V. Offers a low on-resistance (Rds On Max) of 11mΩ and an input capacitance of 2.6nF. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. This component is lead-free and RoHS compliant.
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About AO4407A
The Alpha & Omega AO4407A Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: P-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in an SOIC-8 package. Features a continuous drain current of 12A and a drain-to-source voltage of 30V. Offers a low on-resistance (Rds On Max) of 11mΩ and an input capacitance of 2.6nF. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. This component is lead-free and RoHS compliant.. Key parameters include Continuous Drain Current (ID): 12A, Drain to Source Voltage (Vdss): 30V, Gate to Source Voltage (Vgs): 25V, Input Capacitance: 2.6nF, and Lead Free: Lead Free. AO4407A is manufactured by Alpha & Omega as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Alpha & Omega
- Category
- Semiconductors
- File Size
- 210 KB
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Parameters
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 3.1W |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package/Case | SOIC |
| Packaging | Cut Tape |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| RoHS | Compliant |
| RoHS Compliant | Yes |