Semiconductors
MMBD4148
Automotive-grade switching diode, single configuration, in a 3-pin SOT-23 (TO-236AB) surface-mount package. Features a 75V peak reverse repetitive voltage, 0.215A maximum continuous forward current, and a 4ns peak reverse recovery time. Maximum power dissipation is 250mW, with an operating temperature range of -65°C to 150°C. The small outline transistor package has gull-wing leads and dimensions of 3mm (L) x 1.4mm (W) x 1mm (H).
MMBD4148CC
Ultra-fast switching diode featuring a 4ns reverse recovery time and 100V repetitive reverse voltage. This general-purpose rectifier offers a 200mA average rectified current and a 2A maximum surge current. Housed in a SOT-23 surface mount package, it operates from -55°C to 150°C with a 350mW power dissipation. The common cathode element configuration and RoHS compliance make it suitable for various electronic applications.
MMBD4148SE
Ultra-fast general-purpose rectifier diode with a 4ns reverse recovery time. Features a 200mA average rectified current and 100V repetitive reverse voltage. Surface mountable in a SOT-23 package, this RoHS compliant component offers a 2A maximum surge current and 350mW power dissipation. Operating temperature range is -55°C to 150°C.
MMBF0201NLT1G
Single N-Channel Small Signal Logic Level Power MOSFET 20V, 300mA, 1Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL
MMBF0202PLT1G
300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, LEAD FREE, CASE 318-08, 3 PIN
MMBF170
This device is an N-channel enhancement-mode DMOS field-effect transistor in a SOT-23 package. It is rated for 60 V drain-source voltage, 500 mA continuous drain current, and ±20 V gate-source voltage. The transistor is designed for low-voltage, low-current switching applications including small servo motor control, power MOSFET gate drivers, and general switching functions. It provides low on-state resistance with 1.2 Ω typical at VGS = 10 V and ID = 200 mA, along with fast switching performance with 10 ns maximum turn-on and turn-off times. The operating and storage junction temperature range is -55°C to 150°C, and the device is specified as Pb-free.
MMBT2222A
NPN bipolar junction transistor (BJT) for surface mount applications. Features a 40V collector-emitter voltage, 1A maximum DC collector current, and 350mW maximum power dissipation. This single-element transistor is housed in a 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads. Operating temperature range is -55°C to 150°C, with a minimum transition frequency of 300MHz.
MMBT2222A 1P
NPN bipolar junction transistor (BJT) for surface mount applications. Features a 40V collector-emitter voltage, 1A maximum DC collector current, and 350mW maximum power dissipation. This single-element transistor is housed in a 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads. Operating temperature range is -55°C to 150°C, with a minimum transition frequency of 300MHz.
MMBT2907A
PNP Bipolar Junction Transistor (BJT) in a SOT-23 surface mount package. Features a maximum collector current of 800mA and a collector-emitter breakdown voltage of 60V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. RoHS compliant and lead-free.
MMBT3904
NPN bipolar junction transistor in a SOT-23 package, featuring a 40V collector-emitter breakdown voltage and a 200mA maximum collector current. This surface mount device offers a minimum DC current gain (hFE) of 100 and a transition frequency of 270MHz. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 350mW. Compliant with RoHS and REACH SVHC standards, this component is lead-free.
MMBT3904-1AM(RANGE:100-300)
NPN bipolar junction transistor in a SOT-23 package, featuring a 40V collector-emitter breakdown voltage and a 200mA maximum collector current. This surface mount device offers a minimum DC current gain (hFE) of 100 and a transition frequency of 270MHz. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 350mW. Compliant with RoHS and REACH SVHC standards, this component is lead-free.
MMBT3906
PNP Bipolar Junction Transistor in SOT-23 package. Features a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. Surface mountable and RoHS compliant.
MMBT4401
This device is an NPN silicon epitaxial planar transistor intended for switching and amplifier applications. It is housed in a SOT-23 plastic package and is rated for 60 V collector-base voltage, 40 V collector-emitter voltage, and 600 mA collector current. Power dissipation is 250 mW at 25°C, with a maximum junction temperature of 150°C and a storage temperature range of -55°C to +150°C. The datasheet lists a current-gain bandwidth product of 250 MHz and DC current gain values ranging from 100 to 300 at 150 mA.
MMBT4403
PNP Bipolar Junction Transistor (BJT) in SOT-23 surface mount package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 350mW. RoHS compliant and supplied on tape and reel.
MMBT5401
PNP Bipolar Junction Transistor (BJT) in SOT-23 package. Features 150V collector-emitter voltage (VCEO) and 600mA maximum collector current. Operates with a transition frequency of 300MHz and a maximum power dissipation of 350mW. This surface mount device is RoHS compliant and operates across a temperature range of -55°C to 150°C.
MMBT5551
NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 160V Collector-Emitter Voltage (VCEO) and 600mA Max Collector Current. Offers a 300MHz Max Frequency and 100MHz Transition Frequency. Packaged in a SOT-23 surface mount case, this RoHS compliant component operates from -55°C to 150°C.
MMBTA05
NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 60V collector-emitter breakdown voltage and a 500mA maximum collector current. Operates with a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Packaged in a SOT-23 surface-mount case, supplied on a 3000-piece tape and reel. RoHS compliant with a maximum power dissipation of 350mW.
MMBTA06
This device is a general-purpose NPN bipolar transistor in a SOT-23 surface-mount package. KEC lists a collector-emitter voltage rating of 80 V, continuous collector current of 0.5 A, and power dissipation of 0.35 W. The product page specifies a minimum DC current gain of 100 and a maximum collector-emitter saturation voltage of 0.25 V. Ordering information on the manufacturer site shows reel packaging with 3,000 pieces for listed orderable variants.
MMBTA42
NPN bipolar junction transistor (BJT) for surface mount applications in a SOT-23 package. Features a maximum collector-emitter voltage (VCEO) of 300V and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 40 and a transition frequency (fT) of 50MHz. Maximum power dissipation is 240mW, with operating temperatures ranging from -55°C to 150°C. RoHS compliant and lead-free.
MMBTA44
Small Signal Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon,