NCE60H15G
This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage and 150 A continuous drain current at 25°C. It uses advanced trench technology to provide low on-resistance and low gate charge, with a typical RDS(on) of 3.4 mΩ and a maximum of 4.5 mΩ at VGS = 10 V. The part is supplied in a TO-220-3L package and supports operation from -55°C to 175°C junction temperature. The datasheet lists 1400 mJ single-pulse avalanche energy, 0.68 °C/W junction-to-case thermal resistance, and Pb-free construction. Typical applications include power switching, hard-switched high-frequency circuits, and uninterruptible power supplies.
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About NCE60H15G
The NCE Power NCE60H15G Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage and 150 A continuous drain current at 25°C. It uses advanced trench technology to provide low on-resistance and low gate charge, with a typical RDS(on) of 3.4 mΩ and a maximum of 4.5 mΩ at VGS = 10 V. The part is supplied in a TO-220-3L package and supports operation from -55°C to 175°C junction temperature. The datasheet lists 1400 mJ single-pulse avalanche energy, 0.68 °C/W junction-to-case thermal resistance, and Pb-free construction. Typical applications include power switching, hard-switched high-frequency circuits, and uninterruptible power supplies.. Key parameters include Drain Current Continuous: 150A, Drain Current Continuous at 100°C: 105A, Drain-Source Breakdown Voltage Typ: 68V, Drain-Source On-Resistance Max: 4.5mΩ, and Drain-Source On-Resistance Typ: 3.4mΩ. NCE60H15G is manufactured by NCE Power as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- NCE Power
- Category
- Semiconductors
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Parameters
| Drain Current Continuous | 150A |
| Drain Current Continuous at 100°C | 105A |
| Drain-Source Breakdown Voltage Typ | 68V |
| Drain-Source On-Resistance Max | 4.5mΩ |
| Drain-Source On-Resistance Typ | 3.4mΩ |
| Drain-Source Voltage | 60V |
| Forward Transconductance Min | 180S |
| Gate-Body Leakage Current Max | ±100nA |
| Gate-Source Voltage | ±20V |
| Gate Threshold Voltage | 2 to 4V |
| Junction-to-Case Thermal Resistance | 0.68°C/W |
| Operating Junction and Storage Temperature Range | -55 to 175°C |
| Pb Free | Yes |
| Pulsed Drain Current | 600A |
| Single Pulse Avalanche Energy | 1400mJ |
| Zero Gate Voltage Drain Current Max | 1µA |