Semiconductors
MMBTA55
PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 50MHz. Packaged in a compact SOT-23 surface-mount case, this RoHS-compliant component operates from -55°C to 150°C with a power dissipation of 350mW.
MMBTA56
PNP Bipolar Junction Transistor (BJT) in SOT-23 package. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 80V. Offers a maximum power dissipation of 350mW and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
MMBTA92
PNP Bipolar Junction Transistor (BJT) in SOT-23 surface mount package. Features a 300V collector-emitter breakdown voltage and a maximum collector current of 500mA. Offers a minimum hFE of 40 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. RoHS compliant and lead-free.
MMBTA94
Small Signal Bipolar Transistor
MMBZ5226B
The MMBZ5226B is a surface mount zener diode with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 350mW and a maximum reverse leakage current of 25uA. The diode is packaged in a SOT-23 package and is lead free. It has a tolerance of 5% and a DC rated voltage of 3.3V.
MMDT2227
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SOT-363, 6 PIN
MMDT3904
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6
MMDT5551
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-6
MMST3904
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SMT3, SC-59, 3 PIN
MMSZ4680
Zener Diode, 2.2V V(Z), 5%, 0.5W, Silicon, Unidirectional, PLASTIC PACKAGE-2
MMSZ4685
Zener Diode, 3.6V V(Z), 5%, 0.5W, Silicon, Unidirectional
MMSZ4688
Surface mount Zener diode with a 4.7V DC rated voltage and 5% voltage tolerance. Features 500mW maximum power dissipation and a Zener current of 50µA. Operating temperature range spans -55°C to 150°C. Packaged in a 3000-piece tape and reel.
MMSZ4691
Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, Unidirectional
MMSZ4692
The MMSZ4692 is a unidirectional silicon zener diode with a maximum operating temperature of 150°C and a maximum power dissipation of 0.5W. It has a dual terminal position and a pin count of 2. The diode element material is silicon and the diode type is a zener diode. The device is available in a 2-pin package type R-PDSO-G2.
MMSZ4693
Zener Diode, 7.5V V(Z), 5%, 0.5W, Silicon, Unidirectional
MMSZ4696
Zener Diode, 9.1V V(Z), 5%, 0.5W, Silicon, Unidirectional, PLASTIC PACKAGE-2
MMSZ4697
The MMSZ4697 is a unidirectional silicon zener diode with a maximum operating temperature of 150°C and a maximum power dissipation of 0.5W. It has a dual terminal position and a pin count of 2. The diode element material is silicon and the diode type is a zener diode. The MMSZ4697 is packaged in a 2-pin R-PDSO-G2 package and is suitable for use in a variety of applications.
MMSZ4699
Zener Diode, 12V V(Z), 5%, 0.5W, Silicon, Unidirectional,
MMSZ5221B
Zener Diode, 2.4V V(Z), 5%, 0.5W
MMSZ5225B
Zener Diode, 3V V(Z), 5%, 0.5W, Silicon, Unidirectional, PLASTIC PACKAGE-2