IRG4BC40W
The IRG4BC40W is a 600V insulated gate bipolar transistor with a maximum collector current of 40A. It is packaged in a TO-220-3 flange mount configuration and is available in quantities of 50. The device is not RoHS compliant. The transistor has a maximum power dissipation of 160W and a collector emitter breakdown voltage of 600V.
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About IRG4BC40W
The International Rectifier IRG4BC40W Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The IRG4BC40W is a 600V insulated gate bipolar transistor with a maximum collector current of 40A. It is packaged in a TO-220-3 flange mount configuration and is available in quantities of 50. The device is not RoHS compliant. The transistor has a maximum power dissipation of 160W and a collector emitter breakdown voltage of 600V.. Key parameters include Collector Emitter Breakdown Voltage: 600V, Collector Emitter Voltage (VCEO): 2.5V, Max Collector Current: 40A, Max Power Dissipation: 160W, and Mount: Through Hole. IRG4BC40W is manufactured by International Rectifier as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- International Rectifier
- Category
- Semiconductors
- File Size
- 58 KB
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Parameters
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 2.5V |
| Max Collector Current | 40A |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package/Case | TO-220-3 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS | Not Compliant |
| RoHS Compliant | No |