FDN340P

Single P-Channel Logic Level PowerTrench® MOSFET with -20V Drain-Source Breakdown Voltage and 2A Continuous Drain Current. Features 70mΩ Max Drain-Source On Resistance and 500mW Max Power Dissipation. Operates from -55°C to 150°C, packaged in SOT-23 for surface mounting. Includes 11ns Fall Time and 27ns Turn-Off Delay Time.

Download PDF

Similar Components

SS18

Surface mount general purpose rectifier with 1A average rectified current and 80V repetitive reverse voltage. Features a DO-214AC package, 40A peak non-repetitive surge current, and a maximum operating temperature of 125°C. This lead-free component offers a maximum reverse leakage current of 200uA.

OnsemiSemiconductors
27 5

BSS138

N-channel enhancement-mode field-effect transistor supports logic-level gate drive in a compact SOT-23 surface-mount package. The device is rated for 50 V drain-source voltage and 220 mA continuous drain current. On-resistance is specified at 3.5 ohm maximum with 10 V gate drive and 6.0 ohm maximum with 4.5 V gate drive. The package is Pb-free and halogen-free, with reel packaging for automated assembly.

OnsemiSemiconductors
36 8

MMBT5551

NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 160V Collector-Emitter Voltage (VCEO) and 600mA Max Collector Current. Offers a 300MHz Max Frequency and 100MHz Transition Frequency. Packaged in a SOT-23 surface mount case, this RoHS compliant component operates from -55°C to 150°C.

OnsemiSemiconductors
29 6

MMBTA55

PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 50MHz. Packaged in a compact SOT-23 surface-mount case, this RoHS-compliant component operates from -55°C to 150°C with a power dissipation of 350mW.

OnsemiSemiconductors
25 3

BC548B

NPN Bipolar Junction Transistor (BJT) in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 30V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. Supplied in bulk packaging with 5000 units per box.

OnsemiSemiconductors
31 5

1N4002

General purpose rectifier diode with a 1A average rectified current and 100V repetitive reverse voltage. Features a 1A forward current, 30A maximum surge current, and 3W power dissipation. This single element diode is housed in a DO-41 axial package with tin, matte contact plating and supports through-hole mounting. Operating temperature range is -55°C to 175°C, with a low 5uA maximum reverse current.

OnsemiSemiconductors
29 5

About FDN340P

The Onsemi FDN340P Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Single P-Channel Logic Level PowerTrench® MOSFET with -20V Drain-Source Breakdown Voltage and 2A Continuous Drain Current. Features 70mΩ Max Drain-Source On Resistance and 500mW Max Power Dissipation. Operates from -55°C to 150°C, packaged in SOT-23 for surface mounting. Includes 11ns Fall Time and 27ns Turn-Off Delay Time.. Key parameters include Continuous Drain Current (ID): 2A, Current Rating: -2A, DC Rated Voltage: -20V, Drain-source On Resistance-Max: 70MR, and Drain to Source Breakdown Voltage: -20V. FDN340P is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Onsemi
Category
Semiconductors

Ask AI Assistant

Ask questions about FDN340P specifications

AI Powered

Click to ask a quick question:

Parameters

Continuous Drain Current (ID)2A
Current Rating-2A
DC Rated Voltage-20V
Drain-source On Resistance-Max70MR
Drain to Source Breakdown Voltage-20V
Drain to Source Resistance60mR
Drain to Source Voltage (Vdss)20V
Dual Supply Voltage-20V
Element ConfigurationSingle
Fall Time11ns
Gate to Source Voltage (Vgs)8V
Height0.94mm
Input Capacitance779pF
Lead FreeLead Free
Length2.92mm
Max Operating Temperature150°C
Max Power Dissipation500mW
Min Operating Temperature-55°C
MountSurface Mount
Nominal Vgs-800mV
Number of Elements1
Package/CaseSOT-23
Package Quantity1
PackagingTape and Reel
PolarityP-CHANNEL
Power Dissipation500mW
Radiation HardeningNo
Rds On Max70mR
Reach SVHC CompliantNo
RoHSCompliant
RoHS CompliantYes
SeriesPowerTrench®
TerminationSMD/SMT
Threshold Voltage-800mV
Turn-Off Delay Time27ns
Turn-On Delay Time10ns
Weight0.03g
Width3.05mm