NTD5867NLT4G
Single N-Channel Logic Level Power MOSFET featuring 60V Drain to Source Breakdown Voltage and 39mΩ Drain to Source On Resistance. This surface mount component offers a continuous drain current of 20A and a maximum power dissipation of 36W. Designed for logic-level gate drive with a nominal Vgs of 1.8V, it operates across a temperature range of -55°C to 150°C. The MOSFET is housed in a DPAK package, facilitating efficient heat dissipation and integration into compact designs.
Similar Components
FDN340P
Single P-Channel Logic Level PowerTrench® MOSFET with -20V Drain-Source Breakdown Voltage and 2A Continuous Drain Current. Features 70mΩ Max Drain-Source On Resistance and 500mW Max Power Dissipation. Operates from -55°C to 150°C, packaged in SOT-23 for surface mounting. Includes 11ns Fall Time and 27ns Turn-Off Delay Time.
DTC114EET1G
NPN digital bipolar transistor in SOT-416 package, featuring a 50V collector-emitter breakdown voltage and 100mA continuous collector current. Offers a maximum power dissipation of 200mW and a low collector-emitter saturation voltage of 250mV. Operates across a temperature range of -55°C to 150°C, with a minimum hFE of 35. This RoHS and Halogen Free component is supplied on tape and reel.
MJE13007
8.0 A, 400 V NPN Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE
US1MF
Surface mount general purpose rectifier diode, featuring a 1000V repetitive peak reverse voltage and a 1A forward current rating. This silicon diode offers a wide operating temperature range from -55°C to 150°C. Designed with two terminals for dual terminal positioning, it contains a single diode element.
MMSZ5250B
Diode Zener Single 20V 5% 500mW 2-Pin SOD-123 T/R
MMBT2907A
PNP Bipolar Junction Transistor (BJT) in a SOT-23 surface mount package. Features a maximum collector current of 800mA and a collector-emitter breakdown voltage of 60V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. RoHS compliant and lead-free.
About NTD5867NLT4G
The Onsemi NTD5867NLT4G Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Single N-Channel Logic Level Power MOSFET featuring 60V Drain to Source Breakdown Voltage and 39mΩ Drain to Source On Resistance. This surface mount component offers a continuous drain current of 20A and a maximum power dissipation of 36W. Designed for logic-level gate drive with a nominal Vgs of 1.8V, it operates across a temperature range of -55°C to 150°C. The MOSFET is housed in a DPAK package, facilitating efficient heat dissipation and integration into compact designs.. Key parameters include Continuous Drain Current (ID): 20A, Drain-source On Resistance-Max: 39MR, Drain to Source Breakdown Voltage: 60V, Drain to Source Resistance: 39mR, and Drain to Source Voltage (Vdss): 60V. NTD5867NLT4G is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Onsemi
- Category
- Semiconductors
Ask AI Assistant
Ask questions about NTD5867NLT4G specifications
Click to ask a quick question:
Parameters
| Continuous Drain Current (ID) | 20A |
| Drain-source On Resistance-Max | 39MR |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 39mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 2.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 675pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 36W |
| Min Operating Temperature | -55°C |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package/Case | DPAK |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 36W |
| Quest | 198$1.288$0.805———View offer |
| Radiation Hardening | No |
| Rds On Max | 39mR |
| Reach SVHC Compliant | No |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 18.2ns |
| Turn-On Delay Time | 6.5ns |
| Width | 6.22mm |