AO4468
N-Channel Silicon Metal-oxide Semiconductor FET, designed for small signal applications. Features a continuous drain current of 10.5A and a drain-to-source voltage of 30V. Offers a low on-resistance (Rds On Max) of 14mR and a gate-to-source voltage of 20V. This surface-mount device, housed in an SOIC-8 package, operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. Input capacitance is rated at 1.2nF.
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About AO4468
The Alpha & Omega AO4468 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-Channel Silicon Metal-oxide Semiconductor FET, designed for small signal applications. Features a continuous drain current of 10.5A and a drain-to-source voltage of 30V. Offers a low on-resistance (Rds On Max) of 14mR and a gate-to-source voltage of 20V. This surface-mount device, housed in an SOIC-8 package, operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. Input capacitance is rated at 1.2nF.. Key parameters include Continuous Drain Current (ID): 10.5A, Drain to Source Voltage (Vdss): 30V, Gate to Source Voltage (Vgs): 20V, Input Capacitance: 1.2nF, and Max Operating Temperature: 150°C. AO4468 is manufactured by Alpha & Omega as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Alpha & Omega
- Category
- Semiconductors
- File Size
- 131 KB
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Parameters
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.2nF |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 3.1W |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package/Case | SOIC |
| Packaging | Cut Tape |
| Power Dissipation | 3.1W |
| Rds On Max | 14mR |
| RoHS | Compliant |
| RoHS Compliant | Yes |