Alpha & Omega
AO3407A
P-Channel MOSFET, TO-236-3 package, offering a 30V drain-to-source voltage and 4.3A continuous drain current. Features 48mΩ Rds On Max, 1.4W power dissipation, and 830pF input capacitance. Designed for surface mount applications, this single-element silicon transistor operates from -55°C to 150°C and is RoHS compliant and lead-free.
AO3415A
N-channel MOSFET transistor in a TO-236-3 package, designed for surface mounting. Features a continuous drain current of 5A and a drain-to-source voltage of 20V. Offers a low on-resistance of 45mΩ maximum. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.5W. This component is RoHS compliant and lead-free.
AO3416
N-Channel Silicon Metal-Oxide Semiconductor FET, designed for surface mount applications. Features a continuous drain current of 6.5A and a drain-to-source voltage of 20V. Offers a low on-resistance of 22mΩ and an input capacitance of 1.16nF. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.4W. Packaged in a TO-236-3 (GREEN PACKAGE-3) and is RoHS compliant.
AO4406A
The AO4406A is a power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 3.1W and a maximum drain to source voltage of 30V. The device has a continuous drain current of 13A and an input capacitance of 910pF. It is packaged in a surface mount SOIC-8 package and is available on cut tape.
AO4407A
P-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in an SOIC-8 package. Features a continuous drain current of 12A and a drain-to-source voltage of 30V. Offers a low on-resistance (Rds On Max) of 11mΩ and an input capacitance of 2.6nF. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. This component is lead-free and RoHS compliant.
AO4409
The AO4409 is a surface mount junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 3.1W and a continuous drain current of 15A. The device is packaged in a lead-free SOIC-8 package and is RoHS compliant.
AO4410
Transistor
AO4420
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOIC-8
AO4435
Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOIC-8
AO4468
N-Channel Silicon Metal-oxide Semiconductor FET, designed for small signal applications. Features a continuous drain current of 10.5A and a drain-to-source voltage of 30V. Offers a low on-resistance (Rds On Max) of 14mR and a gate-to-source voltage of 20V. This surface-mount device, housed in an SOIC-8 package, operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. Input capacitance is rated at 1.2nF.
AO4606
Transistor
AO4614B
N and P-Channel MOSFET transistor in a SOIC package, designed for surface mount applications. Features a continuous drain current of 5A and a drain-to-source voltage of 40V, with a low Rds(on) of 30mΩ. Operates across a wide temperature range from -55°C to 150°C, supporting a maximum power dissipation of 2W. Input capacitance is 650pF, and the component is RoHS compliant.
AO4801A
Transistor
AO4803A
The AO4803A is a surface mount N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 5A and a drain to source voltage of 30V. The device is packaged in a SOIC package and is mounted on the surface of a printed circuit board. The AO4803A is RoHS compliant and has a maximum power dissipation of 2W.
AO4805
Surface mount N-channel MOSFET with 30V drain-source voltage and 9A continuous drain current. Features low 19mΩ Rds(on) and 2.6nF input capacitance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2W. Packaged in SOIC for cut tape applications.
AO4822
Small Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOIC-8
AO4828
The AO4828 is a 2 N-Channel FET with a maximum operating temperature of 150°C and a maximum power dissipation of 2W. It has a maximum drain to source voltage of 60V and an input capacitance of 540pF. The device is packaged in a surface mount SOIC package and is RoHS compliant. The AO4828 is suitable for use in a variety of applications, including those requiring high temperature operation.
AO4882
Surface mountable N-channel JFET transistor with a maximum continuous drain current of 8A and a drain-to-source voltage of 40V. Features a low on-resistance of 19mΩ and an input capacitance of 415pF. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2W. This RoHS compliant component is provided in cut tape packaging.
AOD403
P-channel MOSFET, 30V drain-source voltage, 70A continuous drain current, and 6mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET features a TO-252/DPAK package for surface mounting, with a maximum power dissipation of 90W. Operating temperature range is -55°C to 175°C, and input capacitance is 5.3nF. RoHS compliant.
AOD4184A
Surface mount N-channel MOSFET with 40V drain-source voltage and 50A continuous drain current. Features low 7mΩ Rds(on) and 1.8nF input capacitance. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 50W. Packaged in DPAK for efficient thermal management.