IRFB7430PBF
N-channel enhancement mode power MOSFET featuring HEXFET process technology. This single-element silicon transistor offers a maximum drain-source voltage of 40V and a continuous drain current of 409A. Housed in a TO-220AB package with 3 through-hole pins and a tab, it boasts a low drain-source on-resistance of 1.3 mOhm at 10V. Operating temperature range is -55°C to 175°C, with a maximum power dissipation of 375W.
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About IRFB7430PBF
The Infineon IRFB7430PBF Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-channel enhancement mode power MOSFET featuring HEXFET process technology. This single-element silicon transistor offers a maximum drain-source voltage of 40V and a continuous drain current of 409A. Housed in a TO-220AB package with 3 through-hole pins and a tab, it boasts a low drain-source on-resistance of 1.3 mOhm at 10V. Operating temperature range is -55°C to 175°C, with a maximum power dissipation of 375W.. Key parameters include AEC Qualified: No, Automotive: No, Basic Package Type: Through Hole, Cage Code: CG091, and Category: Power MOSFET. IRFB7430PBF is manufactured by Infineon as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Infineon
- Category
- Semiconductors
- File Size
- 250 KB
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Parameters
| AEC Qualified | No |
| Automotive | No |
| Basic Package Type | Through Hole |
| Cage Code | CG091 |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN | EAR99 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Jedec | TO-220AB |
| Lead Shape | Through Hole |
| Material | Si |
| Maximum Continuous Drain Current | 409A |
| Maximum Drain Source Resistance | 1.3@10VmOhm |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Gate Threshold Voltage | 3.9V |
| Maximum Power Dissipation | 375000mW |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 9.02(Max) |
| Package Length (mm) | 10.67(Max) |
| Package Material | Plastic |
| Package Width (mm) | 4.83(Max) |
| PCB | 3 |
| Pin Count | 3 |
| Pin Pitch (mm) | 2.54 |
| PPAP | No |
| Process Technology | HEXFET |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Schedule B | 8541290080 |
| Schukat | 15010—$3.0079$1.8857——View offer |
| Seated Plane Height (mm) | 20.57(Max) |
| Tab | Tab |
| Typical Gate Charge @ 10V | 300nC |
| Typical Gate Charge @ Vgs | 300@10VnC |
| Typical Input Capacitance @ Vds | 14240@25VpF |