IRFB7440PBF
N-channel Power MOSFET featuring 40V drain-source voltage and 172A continuous drain current. This single-element HEXFET technology MOSFET is housed in a TO-220AB package with 3 through-hole pins and a tab. It offers a low drain-source on-resistance of 2.5 mΩ at 10V and a maximum power dissipation of 143W, operating across a wide temperature range of -55°C to 175°C.
Similar Components
IRF3710PBF
This N-channel silicon power MOSFET is rated for 100 V drain-to-source voltage and 57 A continuous drain current at 25°C case temperature. It is specified with a maximum drain-to-source on-resistance of 23 mΩ at VGS = 10 V and uses the TO-220AB through-hole package. The device supports operation from -55°C to 175°C and is fully avalanche rated with fast switching characteristics. The datasheet also identifies dynamic dv/dt capability and lead-free construction for industrial applications.
IR2184PBF
The IR2184PBF is a half bridge based MOSFET driver from Infineon, designed for automotive applications. It operates within a temperature range of -40 to 125 degrees Celsius and has a nominal supply voltage of 15V. The device features 8 terminals and a DUAL terminal position. It is available in an 8-pin DIP package with dimensions of 7.62mm in width and 9.88mm in length.
IR2110S
The IR2110S is a half bridge based MOSFET driver from Infineon, designed to operate within a temperature range of -40°C to 125°C. It features a supply voltage range of 3.3 to 20V and is available in the SOIC-16 package type. This device is suitable for use in automotive applications due to its temperature grade of AUTOMOTIVE. The IR2110S has 16 terminals and supports a single function, making it a versatile component for power management ICs.
IR2101PBF
Half Bridge Based MOSFET Driver, 0.36A, CMOS, PDIP8, LEAD FREE, PLASTIC, MS-001AB, DIP-8
IPB072N15N3GATMA1
N-Channel Power MOSFET, 150V Vdss, 100A continuous drain current, and 7.2mR Rds On. This silicon, metal-oxide semiconductor FET features a TO-263-3 surface mount package. Maximum power dissipation is 300W, with operating temperatures ranging from -55°C to 175°C. The component is RoHS compliant and Halogen Free.
BAS40-05
Dual silicon Schottky diode with a common-cathode configuration in a SOT-23 package for high-speed switching, circuit protection, voltage clamping, and signal detection or mixing applications. It is rated for 40 V reverse voltage, 120 mA forward current, and 200 mA non-repetitive peak surge forward current. The device provides low forward voltage characteristics, with a typical 310 mV at 1 mA and 450 mV at 10 mA, and has low capacitance of 3 pF typical at 0 V and 1 MHz. Maximum junction temperature is 150 °C, with an operating temperature range of -55 °C to 125 °C and storage range of -55 °C to 150 °C. The BAS40 family is Pb-free and RoHS compliant and is qualified to AEC-Q101.
About IRFB7440PBF
The Infineon IRFB7440PBF Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-channel Power MOSFET featuring 40V drain-source voltage and 172A continuous drain current. This single-element HEXFET technology MOSFET is housed in a TO-220AB package with 3 through-hole pins and a tab. It offers a low drain-source on-resistance of 2.5 mΩ at 10V and a maximum power dissipation of 143W, operating across a wide temperature range of -55°C to 175°C.. Key parameters include AEC Qualified: No, Automotive: No, Basic Package Type: Through Hole, Cage Code: CG091, and Category: Power MOSFET. IRFB7440PBF is manufactured by Infineon as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Infineon
- Category
- Semiconductors
- File Size
- 249 KB
Ask AI Assistant
Ask questions about IRFB7440PBF specifications
Click to ask a quick question:
Parameters
| AEC Qualified | No |
| Automotive | No |
| Basic Package Type | Through Hole |
| Cage Code | CG091 |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN | EAR99 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Jedec | TO-220AB |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current | 172A |
| Maximum Drain Source Resistance | 2.5@10VmOhm |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Gate Threshold Voltage | 3.9V |
| Maximum Power Dissipation | 143000mW |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 9.02(Max) |
| Package Length (mm) | 10.67(Max) |
| Package Material | Plastic |
| Package Width (mm) | 4.83(Max) |
| PCB | 3 |
| Pin Count | 3 |
| Pin Pitch (mm) | 2.54 |
| PPAP | No |
| Process Technology | HEXFET |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Schedule B | 8541290080 |
| Seated Plane Height (mm) | 20.57(Max) |
| Tab | Tab |
| Typical Gate Charge @ 10V | 90nC |
| Typical Gate Charge @ Vgs | 90@10VnC |
| Typical Input Capacitance @ Vds | 4730@25VpF |