NCE Power
NCE01H14G
This N-channel enhancement-mode power MOSFET is rated for 100 V drain-to-source voltage and 140 A continuous drain current at 25°C. It uses trench technology to achieve 4.5 mΩ typical on-resistance at 10 V gate drive and 120 nC typical total gate charge. The device is housed in a TO-220-3L package with 330 W maximum power dissipation and 0.45 °C/W junction-to-case thermal resistance. It supports 1200 mJ single-pulse avalanche energy, operates from -55 °C to 175 °C, and is marked as a Pb-free product.
NCE60H15G
This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage and 150 A continuous drain current at 25°C. It uses advanced trench technology to provide low on-resistance and low gate charge, with a typical RDS(on) of 3.4 mΩ and a maximum of 4.5 mΩ at VGS = 10 V. The part is supplied in a TO-220-3L package and supports operation from -55°C to 175°C junction temperature. The datasheet lists 1400 mJ single-pulse avalanche energy, 0.68 °C/W junction-to-case thermal resistance, and Pb-free construction. Typical applications include power switching, hard-switched high-frequency circuits, and uninterruptible power supplies.
NCE80H12G
N-channel enhancement-mode power MOSFET uses trench technology for low on-resistance and low gate charge. The device is rated for 80 V drain-source voltage and 120 A continuous drain current at 25 °C. On-resistance is specified below 6 mΩ at 10 V gate drive and 40 A drain current. The TO-220 package supports 220 W maximum power dissipation with 0.68 °C/W junction-to-case thermal resistance. The MOSFET is specified for -55 °C to 175 °C junction and storage temperature operation and is marked as a Pb-free product.