NCE80H12G
N-channel enhancement-mode power MOSFET uses trench technology for low on-resistance and low gate charge. The device is rated for 80 V drain-source voltage and 120 A continuous drain current at 25 °C. On-resistance is specified below 6 mΩ at 10 V gate drive and 40 A drain current. The TO-220 package supports 220 W maximum power dissipation with 0.68 °C/W junction-to-case thermal resistance. The MOSFET is specified for -55 °C to 175 °C junction and storage temperature operation and is marked as a Pb-free product.
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About NCE80H12G
The NCE Power NCE80H12G Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-channel enhancement-mode power MOSFET uses trench technology for low on-resistance and low gate charge. The device is rated for 80 V drain-source voltage and 120 A continuous drain current at 25 °C. On-resistance is specified below 6 mΩ at 10 V gate drive and 40 A drain current. The TO-220 package supports 220 W maximum power dissipation with 0.68 °C/W junction-to-case thermal resistance. The MOSFET is specified for -55 °C to 175 °C junction and storage temperature operation and is marked as a Pb-free product.. Key parameters include Continuous Drain Current: 120A, Continuous Drain Current at 100°C: 84A, Derating Factor: 1.47W/°C, Diode Forward Voltage: 1.2 maxV, and Drain-Source Breakdown Voltage: 80 min, 89 typV. NCE80H12G is manufactured by NCE Power as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- NCE Power
- Category
- Semiconductors
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Parameters
| Continuous Drain Current | 120A |
| Continuous Drain Current at 100°C | 84A |
| Derating Factor | 1.47W/°C |
| Diode Forward Voltage | 1.2 maxV |
| Drain-Source Breakdown Voltage | 80 min, 89 typV |
| Drain-Source On-State Resistance | 4.9 typ, 6 max at VGS=10V, ID=40AmΩ |
| Drain-Source Voltage | 80V |
| Fall Time | 39 typns |
| FET Type | N-Channel Enhancement Mode |
| Forward Transconductance | 90 minS |
| Gate-Drain Charge | 64 typnC |
| Gate-Source Charge | 31 typnC |
| Gate-Source Voltage | ±20V |
| Gate Threshold Voltage | 2 min, 3 typ, 4 maxV |
| Input Capacitance | 6500 typpF |
| Maximum Power Dissipation | 220W |
| Operating Junction Temperature Range | -55 to 175°C |
| Output Capacitance | 520 typpF |
| Pb Free | Yes |
| Pulsed Drain Current | 450A |
| Reverse Recovery Charge | 66 typ, 80 maxnC |
| Reverse Recovery Time | 42 typ, 60 maxns |
| Reverse Transfer Capacitance | 460 typpF |
| Rise Time | 24 typns |
| Single Pulse Avalanche Energy | 1400mJ |
| Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.68°C/W |
| Total Gate Charge | 163 typnC |
| Turn-Off Delay Time | 91 typns |
| Turn-On Delay Time | 26 typns |