2SA812
General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC (A): 0.1A; HFE Min: 90; HFE Max: 600; VCE (V): 6V; IC (mA): 1mA; VCE(SAT) (V): 0.3V; IC (mA)1: 100mA; IB (mA): 10mA; FT Min (MHz): 180 MHz; PTM Max (W): 0.2W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23
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About 2SA812
The Galaxy Microelectronics 2SA812 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC (A): 0.1A; HFE Min: 90; HFE Max: 600; VCE (V): 6V; IC (mA): 1mA; VCE(SAT) (V): 0.3V; IC (mA)1: 100mA; IB (mA): 10mA; FT Min (MHz): 180 MHz; PTM Max (W): 0.2W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23. Key parameters include Military Spec: False, Number of Elements: 1, Number of Terminals: 3, REACH: unknown, and Terminal Position: DUAL. 2SA812 is manufactured by Galaxy Microelectronics as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Galaxy Microelectronics
- Category
- Semiconductors
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Parameters
| Military Spec | False |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| REACH | unknown |
| Terminal Position | DUAL |