BD138

PNP Bipolar Junction Transistor (BJT) in SOT-32 package. Features a maximum collector current of 1.5A and a collector-emitter voltage (VCEO) of 60V. Offers a maximum power dissipation of 1.25W and a collector-emitter saturation voltage of 500mV. Operates across a wide temperature range from -65°C to 150°C. Through-hole mount design with tin contact plating.

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About BD138

The Stmicroelectronics BD138 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: PNP Bipolar Junction Transistor (BJT) in SOT-32 package. Features a maximum collector current of 1.5A and a collector-emitter voltage (VCEO) of 60V. Offers a maximum power dissipation of 1.25W and a collector-emitter saturation voltage of 500mV. Operates across a wide temperature range from -65°C to 150°C. Through-hole mount design with tin contact plating.. Key parameters include Collector Base Voltage (VCBO): 60V, Collector Emitter Breakdown Voltage: 60V, Collector Emitter Saturation Voltage: 500mV, Collector-emitter Voltage-Max: -60V, and Collector Emitter Voltage (VCEO): 60V. BD138 is manufactured by Stmicroelectronics as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Stmicroelectronics
Category
Semiconductors
File Size
68 KB

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Parameters

Collector Base Voltage (VCBO)60V
Collector Emitter Breakdown Voltage60V
Collector Emitter Saturation Voltage500mV
Collector-emitter Voltage-Max-60V
Collector Emitter Voltage (VCEO)60V
Contact PlatingTin
Emitter Base Voltage (VEBO)5V
Height10.8mm
hFE Min25
Length7.8mm
Max Collector Current1.5A
Max Operating Temperature150°C
Max Power Dissipation1.25W
Min Operating Temperature-65°C
MountThrough Hole
Number of Elements1
Package/CaseSOT-32
Package Quantity50
PackagingRail/Tube
PolarityPNP
Power Dissipation1.25W
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Radiation HardeningNo
Reach SVHC CompliantNo
RoHSCompliant
RoHS CompliantYes
Width2.7mm