ULN2004
Seven Darlington Arrays
No preview available
Download the PDF to view the complete datasheet
Similar Components
BD136
PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a SOT-32 package. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 45V. Offers a maximum power dissipation of 1.25W and a minimum hFE of 25. Operates within a temperature range of -65°C to 150°C.
TIP147
PNP Darlington Transistor, TO-247 package, featuring a 100V collector-emitter voltage (VCEO) and a 10A maximum collector current. This through-hole component offers a high DC current gain (hFE) of 500 minimum and a maximum power dissipation of 125W. It operates within a temperature range of -65°C to 150°C and is RoHS compliant.
LM324DT
Quad operational amplifier featuring a 1.3MHz gain bandwidth product and 0.4V/µs slew rate. This general-purpose amplifier supports single or dual supply operation from 3V to 30V, with a maximum dual supply voltage of 15V. It offers a 70dB common mode rejection ratio and 100dB voltage gain, with an input bias current of 20nA and input offset voltage of 2mV. Packaged in a 14-pin SOIC for surface mounting, this RoHS compliant component operates within a 0°C to 70°C temperature range.
L298N
Dual full bridge motor driver IC featuring bipolar technology, capable of driving brushed DC motors. Offers two independent driver channels with four outputs, supporting a maximum output current of 2A per channel and a maximum collector current of 4A. Operates with a supply voltage range from 4.8V to 46V, with a typical operating supply voltage of 42V. Includes over-temperature fault protection and a low drain-to-source resistance of 930mR. Packaged in a 15-pin MULTIWATT V configuration for through-hole mounting.
TIP120
NPN Darlington bipolar junction transistor in a TO-220 package. Features a 60V collector-emitter breakdown voltage and a 5A maximum collector current. Offers a high DC current gain (hFE) of 1000 and a maximum power dissipation of 65W. Operates across a wide temperature range from -65°C to 150°C. This through-hole component is RoHS compliant.
2N3055
NPN Bipolar Junction Transistor (BJT) for through-hole, chassis mount applications. Features a 60V collector-emitter voltage (VCEO) and 15A maximum collector current. Offers a 3MHz gain bandwidth product and 115W power dissipation. Operates within a temperature range of -65°C to 200°C. Packaged in a TO-3 case.
About ULN2004
The Stmicroelectronics ULN2004 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Seven Darlington Arrays. Key parameters include RoHS: Not Compliant. ULN2004 is manufactured by Stmicroelectronics as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Stmicroelectronics
- Category
- Semiconductors
Ask AI Assistant
Ask questions about ULN2004 specifications
Click to ask a quick question:
Parameters
| RoHS | Not Compliant |