BD137
The BD137 is a TO-225-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a collector-emitter saturation voltage of 500mV. It can handle a maximum collector current of 1.5A and a maximum power dissipation of 1.25W. The transistor operates within a temperature range of -55°C to 150°C and is not RoHS compliant due to the presence of lead.
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About BD137
The Onsemi BD137 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The BD137 is a TO-225-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a collector-emitter saturation voltage of 500mV. It can handle a maximum collector current of 1.5A and a maximum power dissipation of 1.25W. The transistor operates within a temperature range of -55°C to 150°C and is not RoHS compliant due to the presence of lead.. Key parameters include Collector Base Voltage (VCBO): 60V, Collector Emitter Breakdown Voltage: 60V, Collector Emitter Saturation Voltage: 500mV, Collector-emitter Voltage-Max: 500mV, and Current Rating: 1.5A. BD137 is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Onsemi
- Category
- Semiconductors
- File Size
- 70 KB
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Parameters
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1.5A |
| DC Rated Voltage | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 25 |
| Lead Free | Contains Lead |
| Max Collector Current | 100nA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.25W |
| Min Operating Temperature | -55°C |
| Package/Case | TO-225-3 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS | Not Compliant |
| RoHS Compliant | No |