BD136

PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a SOT-32 package. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 45V. Offers a maximum power dissipation of 1.25W and a minimum hFE of 25. Operates within a temperature range of -65°C to 150°C.

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About BD136

The Stmicroelectronics BD136 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a SOT-32 package. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 45V. Offers a maximum power dissipation of 1.25W and a minimum hFE of 25. Operates within a temperature range of -65°C to 150°C.. Key parameters include Collector Base Voltage (VCBO): 45V, Collector Emitter Breakdown Voltage: 45V, Collector Emitter Saturation Voltage: 500mV, Collector-emitter Voltage-Max: 500mV, and Collector Emitter Voltage (VCEO): 45V. BD136 is manufactured by Stmicroelectronics as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Stmicroelectronics
Category
Semiconductors
File Size
137 KB

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Parameters

Collector Base Voltage (VCBO)45V
Collector Emitter Breakdown Voltage45V
Collector Emitter Saturation Voltage500mV
Collector-emitter Voltage-Max500mV
Collector Emitter Voltage (VCEO)45V
Contact PlatingTin, Matte
Emitter Base Voltage (VEBO)5V
Height10.8mm
hFE Min25
Lead FreeLead Free
Length7.8mm
Max Breakdown Voltage45V
Max Collector Current1.5A
Max Operating Temperature150°C
Max Power Dissipation1.25W
Min Operating Temperature-65°C
MountThrough Hole
Number of Elements1
Package/CaseSOT-32
Package Quantity2000
PackagingRail/Tube
PolarityPNP
Power Dissipation1.25W
Radiation HardeningNo
Reach SVHC CompliantNo
RoHSCompliant
RoHS CompliantYes
Width2.7mm