BD140

PNP silicon transistor in SOT-32 package. Features a maximum collector current of 1.5A and a collector-emitter voltage of 80V. Offers a minimum hFE of 40 and a maximum power dissipation of 1.25W. Operates across a wide temperature range from -65°C to 150°C. Through-hole mount with tin, matte plating. RoHS compliant.

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About BD140

The Stmicroelectronics BD140 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: PNP silicon transistor in SOT-32 package. Features a maximum collector current of 1.5A and a collector-emitter voltage of 80V. Offers a minimum hFE of 40 and a maximum power dissipation of 1.25W. Operates across a wide temperature range from -65°C to 150°C. Through-hole mount with tin, matte plating. RoHS compliant.. Key parameters include Collector Base Voltage (VCBO): 80V, Collector Emitter Breakdown Voltage: 80V, Collector Emitter Saturation Voltage: 500mV, Collector-emitter Voltage-Max: 500mV, and Collector Emitter Voltage (VCEO): 80V. BD140 is manufactured by Stmicroelectronics as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Stmicroelectronics
Category
Semiconductors

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Parameters

Collector Base Voltage (VCBO)80V
Collector Emitter Breakdown Voltage80V
Collector Emitter Saturation Voltage500mV
Collector-emitter Voltage-Max500mV
Collector Emitter Voltage (VCEO)80V
Contact PlatingTin, Matte
Current Rating-1.5A
DC Rated Voltage-80V
Emitter Base Voltage (VEBO)5V
Height10.8mm
hFE Min40
Lead FreeLead Free
Length7.8mm
Max Collector Current1.5A
Max Operating Temperature150°C
Max Power Dissipation1.25W
Min Operating Temperature-65°C
MountThrough Hole
Number of Elements1
Package/CaseSOT-32
Package Quantity50
PackagingRail/Tube
PolarityPNP
Power Dissipation1.25W
Radiation HardeningNo
Reach SVHC CompliantNo
RoHSCompliant
RoHS CompliantYes
Width2.7mm