BC856B

NEXPERIA - BC856B. - TRANSISTOR, PNP SOT-23

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About BC856B

The NXP BC856B Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: NEXPERIA - BC856B. - TRANSISTOR, PNP SOT-23. Key parameters include Collector Base Voltage (VCBO): 80V, Collector Emitter Breakdown Voltage: 65V, Collector Emitter Saturation Voltage: 650mV, Current: 100mA, and Emitter Base Voltage (VEBO): 5V. BC856B is manufactured by NXP as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
NXP
Category
Semiconductors
File Size
67 KB

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Parameters

Collector Base Voltage (VCBO)80V
Collector Emitter Breakdown Voltage65V
Collector Emitter Saturation Voltage650mV
Current100mA
Emitter Base Voltage (VEBO)5V
Height1mm
Length3mm
Max Collector Current100mA
Max Frequency100MHz
Max Operating Temperature150°C
Max Power Dissipation250mW
Min Operating Temperature-65°C
MountSurface Mount
Package/CaseTO-236AB
PolarityPNP
Power Dissipation250mW
Reach SVHC CompliantNo
RoHSCompliant
RoHS CompliantYes
Voltage65V
Width1.4mm