2N3904G
NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 40V collector-emitter breakdown voltage and a 200mA maximum collector current. Operates with a 60V collector-base voltage and a 6V emitter-base voltage. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 300MHz. Packaged in a TO-92 (TO-226) through-hole configuration, with a maximum power dissipation of 625mW and an operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.
Similar Components
BC557
PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 45V collector-emitter voltage (VCEO) and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 150MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 500mW. Through-hole mounting and RoHS compliant.
BAT54C
Schottky diode array, surface mount, SOT-23 package. Features 30V reverse voltage, 200mA average rectified current, and 600mA peak non-repetitive surge current. Offers a low capacitance of 10pF and a fast 5ns reverse recovery time. Operates across a wide temperature range from -55°C to 150°C. RoHS compliant with tin-matte contact plating.
LM555CN
Single timer IC for clock generation and synthesis, operating from a 4.5V to 16V supply. Features a 2MHz frequency capability and a 7.5mA operating supply current. This through-hole component offers 200mA output current with a 50mA low-level output and -200mA high-level output. Packaged in PDIP with lead-free and RoHS compliance, it has a maximum power dissipation of 600mW and operates between 0°C and 70°C.
PN2222
The PN2222 is a TO-92-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 600mA. It has a gain bandwidth product of 250MHz and a maximum power dissipation of 625mW. The transistor is rated for operation between -55°C and 150°C and is available in bulk packaging with 5000 units per package.
MJE13007
8.0 A, 400 V NPN Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE
BC558
PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-92 package. Features a maximum collector current of 100mA and a collector-emitter voltage of 30V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 150MHz. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 500mW. Lead-free and RoHS compliant.
About 2N3904G
The Onsemi 2N3904G Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 40V collector-emitter breakdown voltage and a 200mA maximum collector current. Operates with a 60V collector-base voltage and a 6V emitter-base voltage. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 300MHz. Packaged in a TO-92 (TO-226) through-hole configuration, with a maximum power dissipation of 625mW and an operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.. Key parameters include Collector Base Voltage (VCBO): 60V, Collector Emitter Breakdown Voltage: 40V, Collector Emitter Saturation Voltage: 300mV, Collector-emitter Voltage-Max: 300mV, and Collector Emitter Voltage (VCEO): 40V. 2N3904G is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Onsemi
- Category
- Semiconductors
- File Size
- 204 KB
Ask AI Assistant
Ask questions about 2N3904G specifications
Click to ask a quick question:
Parameters
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Current Rating | 200mA |
| DC Rated Voltage | 40V |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 625mW |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package/Case | TO-92-3 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| RS Americas | —1$0.06$0.044$0.031EachView offer |
| Termination | Through Hole |
| Transition Frequency | 300MHz |
| Type | General Purpose |