BC847BS

NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 45V collector-emitter voltage (VCEO) and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 250MHz. Packaged in a compact SC surface-mount case, this component operates across a wide temperature range from -55°C to 150°C. Supplied in a 3000-piece tape and reel.

BC847BS datasheet preview page 1

Similar Components

SMBJ24A

Unidirectional Transient Voltage Suppressor (TVS) diode designed for surface mount applications. Features a 24V reverse standoff voltage and a 600W peak pulse power rating. Offers a clamping voltage of 38.9V and a maximum breakdown voltage of 29.5V. Operates across a temperature range of -55°C to 150°C with a maximum reverse leakage current of 5µA. Packaged in a DO-214AA case, this RoHS compliant component is supplied on tape and reel.

OnsemiSemiconductors
30 4

BC547

NPN bipolar junction transistor in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Offers a DC rated voltage of 45V, a transition frequency of 300MHz, and a minimum DC current gain (hFE) of 110. Maximum power dissipation is 500mW, with operating temperatures ranging from -65°C to 150°C.

OnsemiSemiconductors
33 4

RS1M

General purpose rectifier diode with 1A average rectified current and 1kV maximum repetitive reverse voltage. Features a 1A forward current, 30A peak non-repetitive surge current, and 500ns reverse recovery time. Housed in a DO-214AC surface mount package with dimensions of 4.75mm length, 2.95mm width, and 2.2mm height. Operates across a temperature range of -55°C to 150°C with 1.19W power dissipation. RoHS compliant and lead-free.

OnsemiSemiconductors
30 7

MMBF0201NLT1G

Single N-Channel Small Signal Logic Level Power MOSFET 20V, 300mA, 1Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL

OnsemiSemiconductors
18 4

MMBT2222A 1P

NPN bipolar junction transistor (BJT) for surface mount applications. Features a 40V collector-emitter voltage, 1A maximum DC collector current, and 350mW maximum power dissipation. This single-element transistor is housed in a 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads. Operating temperature range is -55°C to 150°C, with a minimum transition frequency of 300MHz.

OnsemiSemiconductors
24 5

BC549

NPN Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 500mW. This RoHS compliant component is supplied in bulk packaging.

OnsemiSemiconductors
31 4

About BC847BS

The Onsemi BC847BS Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 45V collector-emitter voltage (VCEO) and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 250MHz. Packaged in a compact SC surface-mount case, this component operates across a wide temperature range from -55°C to 150°C. Supplied in a 3000-piece tape and reel.. Key parameters include Collector Base Voltage (VCBO): 50V, Collector Emitter Breakdown Voltage: 45V, Collector Emitter Saturation Voltage: 650mV, Collector-emitter Voltage-Max: 650mV, and Collector Emitter Voltage (VCEO): 45V. BC847BS is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Onsemi
Category
Semiconductors

Ask AI Assistant

Ask questions about BC847BS specifications

AI Powered

Click to ask a quick question:

Parameters

Collector Base Voltage (VCBO)50V
Collector Emitter Breakdown Voltage45V
Collector Emitter Saturation Voltage650mV
Collector-emitter Voltage-Max650mV
Collector Emitter Voltage (VCEO)45V
Current Rating100mA
DC Rated Voltage45V
Emitter Base Voltage (VEBO)6V
Frequency100MHz
Gain Bandwidth Product100MHz
Height1mm
hFE Min200
Lead FreeLead Free
Length2mm
Max Breakdown Voltage45V
Max Collector Current100mA
Max Operating Temperature150°C
Max Power Dissipation210mW
Min Operating Temperature-55°C
MountSurface Mount
Number of Elements1
Package/CaseSC
Package Quantity3000
PackagingTape and Reel
PolarityNPN
Power Dissipation325mW
Radiation HardeningNo
Reach SVHC CompliantNo
RoHSCompliant
RoHS CompliantYes
Transition Frequency250MHz
Weight0.028g
Width1.25mm