FMMT591

The FMMT591 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum operating temperature of 150°C. It is packaged in a small outline SOT-23 package and is available on cut tape. The transistor has a maximum power dissipation of 500mW and is RoHS compliant. It is not Reach SVHC compliant. The FMMT591 has a transition frequency of 150MHz.

Download PDF

About FMMT591

The Diodes FMMT591 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The FMMT591 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum operating temperature of 150°C. It is packaged in a small outline SOT-23 package and is available on cut tape. The transistor has a maximum power dissipation of 500mW and is RoHS compliant. It is not Reach SVHC compliant. The FMMT591 has a transition frequency of 150MHz.. Key parameters include Collector Emitter Breakdown Voltage: 60V, Collector Emitter Voltage (VCEO): 60V, Max Operating Temperature: 150°C, Max Power Dissipation: 500mW, and Package/Case: SOT-23. FMMT591 is manufactured by Diodes as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Diodes
Category
Semiconductors
File Size
279 KB

Ask AI Assistant

Ask questions about FMMT591 specifications

AI Powered

Click to ask a quick question:

Parameters

Collector Emitter Breakdown Voltage60V
Collector Emitter Voltage (VCEO)60V
Max Operating Temperature150°C
Max Power Dissipation500mW
Package/CaseSOT-23
PackagingCut Tape
PolarityPNP
Power Dissipation500mW
Reach SVHC CompliantNo
RoHSCompliant
RoHS CompliantYes
Transition Frequency150MHz