Semiconductors
TIP122
NPN Darlington transistor featuring a 100V collector-emitter breakdown voltage and a 5A continuous collector current. This through-hole component offers a low saturation voltage of 2V and a high DC current gain (hFE) of 1000. Designed for a maximum power dissipation of 65W, it operates within a temperature range of -65°C to 150°C and is packaged in a TO-220 case. RoHS compliant and lead-free.
TIP127
PNP Complementary Power Darlington Transistor in TO-220 package. Features a 100V Collector-Emitter Voltage (VCEO) and a 5A Max Collector Current. Offers a minimum DC current gain (hFE) of 1000 and a maximum power dissipation of 65W. Designed for through-hole mounting with a lead-free, RoHS-compliant construction. Operating temperature range from -65°C to 150°C.
TIP142
NPN bipolar junction transistor in a TO-247 package, featuring a 100V collector-emitter voltage (VCEO) and a 10A continuous collector current. This through-hole mounted component offers a maximum power dissipation of 125W and a minimum DC current gain (hFE) of 500. Operating temperature range spans from -65°C to 150°C, with a collector-emitter saturation voltage of 2V. The device is RoHS compliant and lead-free.
TIP147
PNP Darlington Transistor, TO-247 package, featuring a 100V collector-emitter voltage (VCEO) and a 10A maximum collector current. This through-hole component offers a high DC current gain (hFE) of 500 minimum and a maximum power dissipation of 125W. It operates within a temperature range of -65°C to 150°C and is RoHS compliant.
TIP31
The TIP31 is a TO-220 packaged NPN bipolar junction transistor with a collector-emitter voltage maximum of 40V and a continuous collector current of 3A. It has a maximum power dissipation of 40W and a gain bandwidth product of 3MHz. The transistor is not RoHS compliant and is available in bulk packaging with 400 units per package.
TIP31C
NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 100V collector-emitter breakdown voltage and a 3A continuous collector current rating. Maximum power dissipation is 2W, with a low collector-emitter saturation voltage of 1.2V. Housed in a TO-220 package with through-hole mounting. Operating temperature range spans from -65°C to 150°C.
TIP32
The TIP32 is a PNP bipolar junction transistor with a collector-emitter voltage maximum of -40V and a collector current maximum of 3A. It features a TO-220 package and is rated for a maximum power dissipation of 40W. The transistor has a gain bandwidth product of 3MHz and a minimum current gain of 25. It operates over a temperature range of -65°C to 150°C.
TIP32C
PNP bipolar junction transistor (BJT) for through-hole mounting in a TO-220 package. Features a collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 3A. Offers a minimum DC current gain (hFE) of 10 and a maximum power dissipation of 2W. Operates across a temperature range of -65°C to 150°C.
TIP41
NPN bipolar junction transistor in a TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 6A and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C with a power dissipation of 2W.
TIP41C
NPN bipolar junction transistor (BJT) with a maximum collector current of 6A and a maximum power dissipation of 65W. Features a collector-emitter voltage (VCEO) of 100V and a collector-base voltage (VCBO) of 100V. This through-hole component is housed in a TO-220 package, offering a minimum hFE of 15 and a maximum collector-emitter saturation voltage of 1.5V. Operating temperature range spans from -65°C to 150°C, with RoHS compliance.
TIP42
PNP Bipolar Junction Transistor (BJT) in a TO-220 package, featuring a maximum collector current of 6A and a collector-emitter breakdown voltage of 40V. This through-hole mounted transistor offers a minimum DC current gain (hFE) of 15 and a transition frequency of 3MHz. With a maximum power dissipation of 2W and an operating temperature range of -65°C to 150°C, it is RoHS compliant and lead-free.
TIP42C
PNP Bipolar Junction Transistor (BJT) in TO-220-3 package. Features a collector-emitter voltage of -100V, maximum collector current of 6A, and a power dissipation of 65W. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C.
TJA1042T/3
The TJA1042T/3 is a CAN transceiver from NXP, operating at a maximum data rate of 1Mbps. It can withstand a maximum supply voltage of 5.5V and a maximum operating temperature of 150°C. The device is mounted on the surface and packaged in a SOT96-1 package. It is RoHS compliant and has a supply current of 70mA.
TJA1050
LAN Transceiver, Single, 8 Pin, Plastic, SOP
TJA1050T/CM
IC DATACOM, INTERFACE CIRCUIT, PDSO8, 3.90 MM, PLASTIC, MS-012, SOT96-1, SOP-8, Network Interface
TJA1050T/CM,118
Automotive CAN transceiver supporting 1Mbps data rates. Features half-duplex communication and a single transceiver function. Operates with a 4.75V to 5.25V supply voltage range and a typical supply current of 10mA. Housed in an 8-pin SO surface mount package, this component offers a wide operating temperature range from -40°C to 150°C.
TJA1051T/3
High-speed CAN transceiver provides the physical interface between a CAN protocol controller and a two-wire CAN bus. It supports high-speed CAN communication up to 1 Mbit/s and is fully ISO 11898-2 compliant for 12 V and 24 V automotive systems. The device operates from a 4.5 V to 5.5 V supply and includes a VIO input for direct interfacing to 3 V to 5 V microcontrollers. Silent mode, TXD dominant time-out, undervoltage detection, thermal protection, and high ESD capability support robust network operation. The SO8 package is a plastic small-outline package with 8 leads and a 3.9 mm body width.
TKDPZT-LV2
MICROSCOPE, DIGITAL TRINOCULAR; Magnification:2.5X to 390X; For Use With:-; Light Source:-; Working Distance:195mm; Camera Type:1.3 Mega Pixel; Inspection Scope Type:Digital Trinocular; Microscope Base:Heavy Duty Weighted Base ;RoHS Compliant: NA
TL071CP
JFET input operational amplifier featuring a 3MHz bandwidth and 13V/µs slew rate. This single-channel amplifier offers a 200pA input bias current and 10mV input offset voltage. Operating with dual supply voltages from 3.5V to 18V, it provides a 70dB common mode rejection ratio and 106.02dB voltage gain. Packaged in a 1-amplifier configuration, it operates within a -40°C to 85°C temperature range.
TL072
The TL071H, TL072H, and TL074H (TL07xH) family of devices are next-generation versions of the industry-standard TL071, TL072, and TL074 (TL07x) devices. These devices provide outstanding value for cost-sensitive applications, with features including low offset (1mV, typical), high slew rate (20V/µs), and common-mode input to the positive supply. High ESD (1.5kV, HBM), integrated EMI and RF filters, and operation across the full –40°C to +125°C range enable the TL07xH devices for use in the most rugged and demanding applications.