Q:What are the key specifications for TIP122?
The TIP122 is an NPN silicon Darlington transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 5A.
NPN Darlington transistor featuring a 100V collector-emitter breakdown voltage and a 5A continuous collector current. This through-hole component offers a low saturation voltage of 2V and a high DC current gain (hFE) of 1000. Designed for a maximum power dissipation of 65W, it operates within a temperature range of -65°C to 150°C and is packaged in a TO-220 case. RoHS compliant and lead-free.
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The NTE Electronics 2N3904 is a general-purpose NPN transistor with a collector-emitter breakdown voltage of 40V and a maximum power dissipation of 625mW. It is packaged in a bulk format and has a transition frequency of 300MHz. The transistor operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The 2N3904 is suitable for a variety of applications including general-purpose switching and amplification.
The NTE Electronics 2N3906 is a PNP transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. It is packaged in a TO-226-3 case and is designed for through-hole mounting. The transistor has a maximum power dissipation of 625mW and an operating temperature range of -55°C to 150°C. The device is RoHS compliant and has a transition frequency of 250MHz.
The NTE Electronics 1N5408 is a general purpose rectifier diode with a maximum operating temperature of 150°C and a maximum repetitive reverse voltage of 1kV. It features a current rating of 3A and a forward surge current of 200A. The diode is packaged in a DO-201AD case and is lead free. It is RoHS compliant and suitable for use in a variety of applications.
The NTE Electronics TIP122 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: NPN Darlington transistor featuring a 100V collector-emitter breakdown voltage and a 5A continuous collector current. This through-hole component offers a low saturation voltage of 2V and a high DC current gain (hFE) of 1000. Designed for a maximum power dissipation of 65W, it operates within a temperature range of -65°C to 150°C and is packaged in a TO-220 case. RoHS compliant and lead-free.. Key parameters include Collector Base Voltage (VCBO): 100V, Collector Emitter Breakdown Voltage: 100V, Collector Emitter Saturation Voltage: 2V, Collector-emitter Voltage-Max: 4V, and Collector Emitter Voltage (VCEO): 100V. TIP122 is manufactured by NTE Electronics as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
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The TIP122 is an NPN silicon Darlington transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 5A.
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector-emitter Voltage-Max | 4V |
| Collector Emitter Voltage (VCEO) | 100V |
| Current Rating | 5A |
| DC Rated Voltage | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.15mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 500uA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2W |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package/Case | TO-220 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Weight | 0.211644oz |
| Width | 4.6mm |