TIP31

The TIP31 is a TO-220 packaged NPN bipolar junction transistor with a collector-emitter voltage maximum of 40V and a continuous collector current of 3A. It has a maximum power dissipation of 40W and a gain bandwidth product of 3MHz. The transistor is not RoHS compliant and is available in bulk packaging with 400 units per package.

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About TIP31

The Central Semiconductor TIP31 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The TIP31 is a TO-220 packaged NPN bipolar junction transistor with a collector-emitter voltage maximum of 40V and a continuous collector current of 3A. It has a maximum power dissipation of 40W and a gain bandwidth product of 3MHz. The transistor is not RoHS compliant and is available in bulk packaging with 400 units per package.. Key parameters include Collector Base Voltage (VCBO): 40V, Collector Emitter Saturation Voltage: 1.2V, Collector-emitter Voltage-Max: 40V, Continuous Collector Current: 3A, and Emitter Base Voltage (VEBO): 5V. TIP31 is manufactured by Central Semiconductor as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Central Semiconductor
Category
Semiconductors

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Parameters

Collector Base Voltage (VCBO)40V
Collector Emitter Saturation Voltage1.2V
Collector-emitter Voltage-Max40V
Continuous Collector Current3A
Emitter Base Voltage (VEBO)5V
Gain Bandwidth Product3MHz
hFE Min10
Max Collector Current3A
Max Power Dissipation40W
Package/CaseTO-220
Package Quantity400
PackagingBulk
PolarityNPN
RoHSNot Compliant
RoHS CompliantNo
SeriesTIP31