Semiconductors
SHT31-ARP-B
The SHT31-ARP-B is a high-performance analog humidity and temperature sensor. It provides a linear analog voltage output for both relative humidity and temperature. This sensor features a wide supply voltage range from 2.4V to 5.5V and utilizes advanced signal processing to ensure high reliability and long-term stability.
SI2300DS-T1-GE3
N-channel MOSFET, surface mount, SOT-23-3 package. Features 30V drain-source voltage, 3.6A continuous drain current, and 68mΩ maximum drain-source on-resistance. Operates with a 12V gate-source voltage and offers fast switching with 10ns turn-on delay and 11ns fall time. Maximum power dissipation is 1.7W, with operating temperatures from -55°C to 150°C. RoHS compliant.
SI2301CDS-T1-GE3
P-channel MOSFET, TO-236 package, designed for general-purpose small signal applications. Features a continuous drain current of 2.3A and a drain-source voltage of -20V. Offers a low drain-source on-resistance of 112mR at a gate-source voltage of -4.5V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W. This surface-mount component is supplied in tape and reel packaging and is RoHS compliant.
SI2301DS
Transistor,
SI2302DS
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI2305DS-T1-GE3
P-channel power MOSFET with 8V drain-source voltage (Vdss) and 3.5A continuous drain current (ID). Features low 52mR drain-to-source resistance (Rds On Max) and 1.25W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a SOT-23-3 surface-mount case, this RoHS compliant component offers fast switching with turn-on delay of 13ns and fall time of 25ns.
SI2308DS-T1-GE3
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI4410BDY-T1-GE3
N-channel, general-purpose small-signal MOSFET with a 30V drain-source voltage and 7.5A continuous drain current. Features low 13.5mΩ drain-to-source resistance and a 1V threshold voltage. Operates across a -55°C to 150°C temperature range with a 1.4W maximum power dissipation. Packaged in a surface-mount SO-8 package, this component is halogen-free and RoHS compliant.
SI4435DDY-T1-GE3
P-channel, silicon, surface-mount field-effect transistor designed for small signal applications. Features a continuous drain current of 8.1A and a drain-to-source breakdown voltage of -30V. Offers a low drain-source on-resistance of 24mR, with turn-on and turn-off delay times of 42ns and 40ns respectively. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. Packaged in an SOP-8 (SO) case, this component is halogen-free and RoHS compliant.
SI4835DDY-T1-GE3
P-channel, silicon, surface-mount field-effect transistor with 8.7A continuous drain current and -30V drain-to-source voltage. Features 18mΩ maximum drain-source on-resistance, 1.96nF input capacitance, and 2.5W power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in SOIC for tape and reel mounting.
SI4946BEY-T1-GE3
N-Channel Power MOSFET, 60V Drain-Source Voltage, 6.5A Continuous Drain Current, and 41mΩ Max Drain-Source On-Resistance. Features 2 N-Channel elements in a surface-mount SO package with 2-Element configuration. Offers 10ns turn-on delay, 10ns fall time, and 25ns turn-off delay. Operates from -55°C to 175°C, with 3.7W max power dissipation. Compliant with HALOGEN FREE and ROHS standards.
SI4953ADY-T1-GE3
P-channel, small-signal MOSFET for general-purpose applications. Features 3.7A continuous drain current and 30V drain-to-source breakdown voltage. Offers low 53mΩ drain-to-source resistance at 10V, with a nominal gate-to-source voltage of -1V. Operates across a wide temperature range of -55°C to 150°C, with a maximum power dissipation of 2W. Packaged in a halogen-free, RoHS-compliant SOP-8 surface-mount package.
SI7454DDP-T1-GE3
N-Channel Power MOSFET, 100V Drain-Source Voltage (Vdss), 21A Continuous Drain Current (ID), and 33mΩ Max Drain-Source On-Resistance (Rds On). Features include a 1.5V Threshold Voltage, 550pF Input Capacitance, and fast switching times with 10ns Turn-On Delay and 9ns Fall Time. This surface-mount device operates from -55°C to 150°C with a Max Power Dissipation of 29.7W. Packaged in a leadless, HALOGEN FREE and ROHS COMPLIANT POWERPAK SOP-8, it is suitable for demanding power applications.
SI7852DP-T1-GE3
N-channel PowerPAK SO MOSFET, 80V drain-source voltage, 7.6A continuous drain current, and 16.5mΩ drain-source resistance. Features include 2V threshold voltage, 17ns turn-on delay, 40ns turn-off delay, and 31ns fall time. Operating temperature range from -55°C to 150°C with 1.9W maximum power dissipation. Surface mount design with 4.9mm length, 5.89mm width, and 1.04mm height.
SI7884BDP-T1-GE3
N-channel power MOSFET with 40V drain-source voltage and 18.5A continuous drain current. Features low 7.5mΩ drain-source on-resistance and 3V threshold voltage. Operates from -55°C to 150°C with a maximum power dissipation of 46W. Packaged in a surface-mount PowerPAK SOP-8, this component is halogen-free and RoHS compliant.
SJ-5312TRANSPARENT
Shape = Round / Hardness = 75 Shore A / Adhesive Material = Acrylic / Material = Polyurethane (PUR) / Diameter mm = 12.7 / Length mm = 12.7 / Width mm = 12.7 / Height mm = 3.5 / Colour = Clear
SJ5318CLEAR
Shape = Square / Hardness = 75 Shore A / Adhesive Material = Acrylic / Material = Polyurethane (PUR) / Length mm = 12.7 / Width mm = 12.7 / Height mm = 5.8 / Colour = Clear
SJ5323CLEAR
Shape = Square / Hardness = 75 Shore A / Adhesive Material = Acrylic / Material = Polyurethane (PUR) / Length mm = 20.6 / Width mm = 20.6 / Height mm = 7.6 / Colour = Clear
SK1045B
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, DO-214AB, SMCJ, 2 PIN
SK14
Schottky diode 1 A 40 V SMA PU=1875 ST, SK14, Diotec