SI2301DS
Transistor,
No preview available
Download the PDF to view the complete datasheet
Similar Components
IRF840PBF
N-Channel Power MOSFET, TO-220AB package, featuring 500V drain-source breakdown voltage and 8A continuous drain current. This silicon metal-oxide semiconductor FET offers 0.85 ohm drain-source resistance and 125W maximum power dissipation. With a nominal gate-source threshold voltage of 4V and a maximum gate-source voltage of 20V, it includes fast switching characteristics with turn-on delay of 14ns and fall time of 20ns. Designed for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C.
SI2308DS-T1-GE3
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI4835DDY-T1-GE3
P-channel, silicon, surface-mount field-effect transistor with 8.7A continuous drain current and -30V drain-to-source voltage. Features 18mΩ maximum drain-source on-resistance, 1.96nF input capacitance, and 2.5W power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in SOIC for tape and reel mounting.
SI7852DP-T1-GE3
N-channel PowerPAK SO MOSFET, 80V drain-source voltage, 7.6A continuous drain current, and 16.5mΩ drain-source resistance. Features include 2V threshold voltage, 17ns turn-on delay, 40ns turn-off delay, and 31ns fall time. Operating temperature range from -55°C to 150°C with 1.9W maximum power dissipation. Surface mount design with 4.9mm length, 5.89mm width, and 1.04mm height.
SD107WS
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM),
SI4946BEY-T1-GE3
N-Channel Power MOSFET, 60V Drain-Source Voltage, 6.5A Continuous Drain Current, and 41mΩ Max Drain-Source On-Resistance. Features 2 N-Channel elements in a surface-mount SO package with 2-Element configuration. Offers 10ns turn-on delay, 10ns fall time, and 25ns turn-off delay. Operates from -55°C to 175°C, with 3.7W max power dissipation. Compliant with HALOGEN FREE and ROHS standards.
About SI2301DS
The Vishay SI2301DS Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Transistor,. Key parameters include RoHS: Not Compliant and RoHS Compliant: No. SI2301DS is manufactured by Vishay as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Vishay
- Category
- Semiconductors
Ask AI Assistant
Ask questions about SI2301DS specifications
Click to ask a quick question:
Parameters
| RoHS | Not Compliant |
| RoHS Compliant | No |