Alpha & Omega
AON7403
Power Field-Effect Transistor, 29A I(D), 30V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, GREEN, DFN-8
AON7406
N-channel power MOSFET featuring 30V drain-source voltage and 25A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 17mΩ Rds On resistance and a maximum power dissipation of 3.1W. Designed for surface mount applications, it operates within a temperature range of -55°C to 150°C and comes in a 3x3mm DFN-8 package. Input capacitance is rated at 888pF, and the component is RoHS compliant.
AON7410
N-channel Power MOSFET, DFN package, offering 30V drain-to-source voltage and 24A continuous drain current. Features low 20mΩ Rds(on) and 660pF input capacitance. Designed for surface mount applications with a maximum power dissipation of 20W and an operating temperature range of -55°C to 150°C. RoHS compliant and supplied in cut tape packaging.
AON7418
N-channel MOSFET transistor featuring 30V drain-source voltage and 50A continuous drain current. Surface mount component with 1.7mΩ maximum on-resistance and 2.994nF input capacitance. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 6.2W. RoHS compliant and supplied in cut tape packaging.
AON7520
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AON7700
Transistor
AON7758
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AON7934
The AON7934 is a dual N-channel enhancement MOSFET from Alpha & Omega. It is packaged in a DFN-A EP package and features two channels with maximum drain source voltages of 30V. The maximum continuous drain currents are 16A for Q1 and 18A for Q2. The maximum gate source voltage is ±20V. The typical gate charge is 8nC at 10V for Q1 and 12.9nC at 10V for Q2. The maximum power dissipation is 23,000mW for Q1 and 25,000mW for Q2. The operating temperature range is from -55°C to 150°C.