SI2308DS-T1-GE3
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Similar Components
IRFZ44N
N-Channel Enhancement-Mode MOSFET with dynamic dv/dt rating, repetitive avalanche rated, 175°C operating temperature, ease of paralleling, fast switching for high efficiency, and simple drive requirements. Packaged in JEDEC TO-220AB molded plastic body. Terminals are solderable per MIL-STD-750, Method 2026. High temperature soldering is guaranteed at 250°C/10 seconds, 0.17\" (4.3mm) from case. Mounting torque is 10 in-lbs maximum. Weight is 2.0g.
LTV-217-B-G
OPTOISOLATOR 3.75KV TRANS 4-SSOP
BAT54AW
Diode Schottky 30V 0.2A 3-Pin SOT-23 T/R
IRL540
N-Channel Power MOSFET with 100V drain-source voltage and 28A continuous drain current. Features low 77mΩ drain-source resistance and 150W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220-3 through-hole mount with a 3-pin configuration. Includes fast switching characteristics with turn-on delay of 8.5ns and fall time of 80ns.
BZX55C3V3-TAP
Diode Zener Single 3.3V 6% 500mW Automotive 2-Pin DO-35 Ammo
MMSZ4699
Zener Diode, 12V V(Z), 5%, 0.5W, Silicon, Unidirectional,
About SI2308DS-T1-GE3
The Vishay SI2308DS-T1-GE3 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET. Key parameters include Continuous Drain Current (ID): 2A, Drain to Source Resistance: 160mR, Drain to Source Voltage (Vdss): 60V, Fall Time: 10ns, and Gate to Source Voltage (Vgs): 20V. SI2308DS-T1-GE3 is manufactured by Vishay as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Vishay
- Category
- Semiconductors
Ask AI Assistant
Ask questions about SI2308DS-T1-GE3 specifications
Click to ask a quick question:
Parameters
| Continuous Drain Current (ID) | 2A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.25W |
| Min Operating Temperature | -55°C |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| Package/Case | SOT-23-3 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Reach SVHC Compliant | Unknown |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Series | SI2 |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.050717oz |