SGP30

The SGP30N60 is a 600V insulated gate bipolar transistor with a current rating of 30A. It is packaged in a TO-220-3 flange mount with a power dissipation of 250W. The device is RoHS compliant and has a maximum operating temperature of 150°C. It is suitable for use in high-power applications where a high voltage and current rating are required.

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About SGP30

The Infineon SGP30 Sensors Transducers datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The SGP30N60 is a 600V insulated gate bipolar transistor with a current rating of 30A. It is packaged in a TO-220-3 flange mount with a power dissipation of 250W. The device is RoHS compliant and has a maximum operating temperature of 150°C. It is suitable for use in high-power applications where a high voltage and current rating are required.. Key parameters include Collector Emitter Breakdown Voltage: 600V, Collector-emitter Voltage-Max: 2.4V, Collector Emitter Voltage (VCEO): 600V, Current Rating: 30A, and DC Rated Voltage: 600V. SGP30 is manufactured by Infineon as part of their Sensors Transducers product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Infineon
Category
Sensors Transducers
File Size
356 KB

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Parameters

Collector Emitter Breakdown Voltage600V
Collector-emitter Voltage-Max2.4V
Collector Emitter Voltage (VCEO)600V
Current Rating30A
DC Rated Voltage600V
Halogen FreeHalogen Free
Height9.25mm
Input TypeSTANDARD
Length10mm
Max Breakdown Voltage600V
Max Collector Current41A
Max Operating Temperature150°C
Max Power Dissipation250W
Min Operating Temperature-55°C
Package/CaseTO-220-3
Package Quantity50
PackagingRail/Tube
Power Dissipation250W
RoHSCompliant
RoHS CompliantYes
TerminationThrough Hole
Width4.4mm