MMBT4401
This device is an NPN silicon epitaxial planar transistor intended for switching and amplifier applications. It is housed in a SOT-23 plastic package and is rated for 60 V collector-base voltage, 40 V collector-emitter voltage, and 600 mA collector current. Power dissipation is 250 mW at 25°C, with a maximum junction temperature of 150°C and a storage temperature range of -55°C to +150°C. The datasheet lists a current-gain bandwidth product of 250 MHz and DC current gain values ranging from 100 to 300 at 150 mA.
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About MMBT4401
The Taitron Components MMBT4401 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: This device is an NPN silicon epitaxial planar transistor intended for switching and amplifier applications. It is housed in a SOT-23 plastic package and is rated for 60 V collector-base voltage, 40 V collector-emitter voltage, and 600 mA collector current. Power dissipation is 250 mW at 25°C, with a maximum junction temperature of 150°C and a storage temperature range of -55°C to +150°C. The datasheet lists a current-gain bandwidth product of 250 MHz and DC current gain values ranging from 100 to 300 at 150 mA.. Key parameters include Military Spec: False, Number of Elements: 1, Number of Terminals: 3, REACH: unknown, and RoHS: Yes. MMBT4401 is manufactured by Taitron Components as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Taitron Components
- Category
- Semiconductors
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Parameters
| Military Spec | False |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| REACH | unknown |
| RoHS | Yes |
| Terminal Position | DUAL |