2N2222

The 2N2222 is a TO-18 packaged NPN transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 800mA. It has a minimum current gain of 100 and a maximum power dissipation of 500mW. The transistor is rated for operation up to 200°C. It is not compliant with RoHS or SVHC regulations.

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About 2N2222

The Multicomp 2N2222 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The 2N2222 is a TO-18 packaged NPN transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 800mA. It has a minimum current gain of 100 and a maximum power dissipation of 500mW. The transistor is rated for operation up to 200°C. It is not compliant with RoHS or SVHC regulations.. Key parameters include Collector Emitter Breakdown Voltage: 30V, Collector Emitter Voltage (VCEO): 400mV, hFE Min: 100, Max Collector Current: 800mA, and Max Operating Temperature: 200°C. 2N2222 is manufactured by Multicomp as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Multicomp
Category
Semiconductors

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Parameters

Collector Emitter Breakdown Voltage30V
Collector Emitter Voltage (VCEO)400mV
hFE Min100
Max Collector Current800mA
Max Operating Temperature200°C
Max Power Dissipation500mW
Package/CaseTO-18
PolarityNPN
Power Dissipation500mW
Reach SVHC CompliantNo
RoHSNot Compliant
RoHS CompliantNo