BF823215
250V 250mW 50mA 50@25mA20V 60MHz 800mV@30mA5mA PNP +150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
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About BF823215
The NXP BF823215 Uncategorized datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: 250V 250mW 50mA 50@25mA20V 60MHz 800mV@30mA5mA PNP +150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS. Key parameters include Collector Emitter Breakdown Voltage: 250V, Collector-emitter Voltage-Max: 800mV, Lead Free: Lead Free, Max Breakdown Voltage: 250V, and Max Collector Current: 50mA. BF823215 is manufactured by NXP as part of their Uncategorized product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- NXP
- Category
- Uncategorized
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Parameters
| Collector Emitter Breakdown Voltage | 250V |
| Collector-emitter Voltage-Max | 800mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 250V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package/Case | TO-236-3 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| RoHS | Compliant |
| Transition Frequency | 60MHz |