IRF830
N-channel enhancement mode power MOSFET featuring 500V maximum drain-source voltage and 4.5A continuous drain current. This single-element silicon transistor is housed in a 3-pin TO-220 package with through-hole mounting. Key specifications include a maximum drain-source resistance of 1500 mOhm at 10V and a typical gate charge of 22 nC at 10V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 75W.
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About IRF830
The Onsemi IRF830 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-channel enhancement mode power MOSFET featuring 500V maximum drain-source voltage and 4.5A continuous drain current. This single-element silicon transistor is housed in a 3-pin TO-220 package with through-hole mounting. Key specifications include a maximum drain-source resistance of 1500 mOhm at 10V and a typical gate charge of 22 nC at 10V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 75W.. Key parameters include AEC Qualified: No, Automotive: No, Basic Package Type: Through Hole, Cage Code: 5V1P1, and Category: Power MOSFET. IRF830 is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Onsemi
- Category
- Semiconductors
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Parameters
| AEC Qualified | No |
| Automotive | No |
| Basic Package Type | Through Hole |
| Cage Code | 5V1P1 |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN | EAR99 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Material | Si |
| Maximum Continuous Drain Current | 4.5 |
| Maximum Drain Source Resistance | 1500@10V |
| Maximum Drain Source Voltage | 500 |
| Maximum Gate Source Voltage | ±20 |
| Maximum Power Dissipation | 75000 |
| Max Operating Temperature | 150 |
| Min Operating Temperature | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 9.27(Max) |
| Package Length (mm) | 10.54(Max) |
| Package Material | Plastic |
| Package Width (mm) | 4.57(Max) |
| PCB | 3 |
| Pin Count | 3 |
| Pin Pitch (mm) | 2.54 |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Schedule B | 8541290080 |
| Tab | Tab |
| Typical Gate Charge @ 10V | 22 |
| Typical Gate Charge @ Vgs | 22@10V |
| Typical Input Capacitance @ Vds | 800(Max)@25V |