The NTE Electronics 2N3904 is a general-purpose NPN transistor with a collector-emitter breakdown voltage of 40V and a maximum power dissipation of 625mW. It is packaged in a bulk format and has a transition frequency of 300MHz. The transistor operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The 2N3904 is suitable for a variety of applications including general-purpose switching and amplification.
The NTE Electronics 2N3906 is a PNP transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. It is packaged in a TO-226-3 case and is designed for through-hole mounting. The transistor has a maximum power dissipation of 625mW and an operating temperature range of -55°C to 150°C. The device is RoHS compliant and has a transition frequency of 250MHz.
The 1N4007 is a general purpose rectifier diode with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a maximum repetitive reverse voltage of 1kV and a maximum reverse current of 5uA. The diode is packaged in a DO-41 package and is available in a lead-free version. It is RoHS compliant and has a peak non-repetitive surge current of 30A.
NPN Darlington transistor featuring a 100V collector-emitter breakdown voltage and a 5A continuous collector current. This through-hole component offers a low saturation voltage of 2V and a high DC current gain (hFE) of 1000. Designed for a maximum power dissipation of 65W, it operates within a temperature range of -65°C to 150°C and is packaged in a TO-220 case. RoHS compliant and lead-free.
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The NTE Electronics 1N5408 is a general purpose rectifier diode with a maximum operating temperature of 150°C and a maximum repetitive reverse voltage of 1kV. It features a current rating of 3A and a forward surge current of 200A. The diode is packaged in a DO-201AD case and is lead free. It is RoHS compliant and suitable for use in a variety of applications.
The NTE Electronics 2N3904 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The NTE Electronics 2N3904 is a general-purpose NPN transistor with a collector-emitter breakdown voltage of 40V and a maximum power dissipation of 625mW. It is packaged in a bulk format and has a transition frequency of 300MHz. The transistor operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The 2N3904 is suitable for a variety of applications including general-purpose switching and amplification.. Key parameters include Collector Emitter Breakdown Voltage: 40V, Collector Emitter Voltage (VCEO): 40V, Max Operating Temperature: 150°C, Max Power Dissipation: 625mW, and Min Operating Temperature: -55°C. 2N3904 is manufactured by NTE Electronics as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
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The 2N3904 is an NPN transistor with a collector‑emitter breakdown voltage of 40 V and a maximum power dissipation of 625 mW. It operates over a temperature range of –55 °C to 150 °C, has a transition frequency (f_T) of 300 MHz, and is supplied in a bulk 200‑pin package.
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 625mW |
| Min Operating Temperature | -55°C |
| Package/Case | 200 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | Unknown |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |