2N5551

MULTICOMP 2N5551 Bipolar (BJT) Single Transistor, NPN, 160 V, 300 MHz, 625 mW, 600 mA, 80

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About 2N5551

The Multicomp 2N5551 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: MULTICOMP 2N5551 Bipolar (BJT) Single Transistor, NPN, 160 V, 300 MHz, 625 mW, 600 mA, 80. Key parameters include Collector Emitter Breakdown Voltage: 160V, Collector Emitter Voltage (VCEO): 180V, Max Operating Temperature: 150°C, Max Power Dissipation: 625mW, and Min Operating Temperature: -55°C. 2N5551 is manufactured by Multicomp as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Multicomp
Category
Semiconductors
File Size
163 KB

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Parameters

Collector Emitter Breakdown Voltage160V
Collector Emitter Voltage (VCEO)180V
Max Operating Temperature150°C
Max Power Dissipation625mW
Min Operating Temperature-55°C
Package/CaseTO-92
PolarityNPN
Power Dissipation625mW
Reach SVHC CompliantNo
RoHSCompliant
Transition Frequency300MHz