Semiconductors

INA333AIDGKR

Single-channel instrumentation amplifier featuring a 150kHz bandwidth and 100dB common mode rejection ratio. This integrated circuit offers a low input bias current of 200pA and an input offset voltage of 25µV, with a high input resistance of 100GΩ. Operating from a minimum dual supply of 900mV up to a maximum of ±2.75V, or a single supply from 1.8V to 5.5V, it draws a quiescent current of 50µA. The amplifier delivers 40mA output current per channel and is housed in a compact 8-pin VSSOP package, measuring 3mm x 3mm x 0.97mm.

Texas Instruments
22 4

IPB020N08N5ATMA1

Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

Infineon
18 3

IPB036N12N3GATMA1

Power Field-Effect Transistor, 180A I(D), 120V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, 7 PIN

Infineon
17 3

IPB054N08N3GATMA1

Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Infineon
18 4

IPB072N15N3GATMA1

N-Channel Power MOSFET, 150V Vdss, 100A continuous drain current, and 7.2mR Rds On. This silicon, metal-oxide semiconductor FET features a TO-263-3 surface mount package. Maximum power dissipation is 300W, with operating temperatures ranging from -55°C to 175°C. The component is RoHS compliant and Halogen Free.

Infineon
20 4

IR2101PBF

Half Bridge Based MOSFET Driver, 0.36A, CMOS, PDIP8, LEAD FREE, PLASTIC, MS-001AB, DIP-8

Infineon
21 3

IR2101STRPBF

Automotive-grade half-bridge MOSFET driver IC, operating from a 10V to 20V supply. Features dual high and low-side non-inverting outputs, capable of driving up to 0.36A. This 8-terminal, SOIC N package component offers a wide operating temperature range from -40°C to 125°C.

Infineon
20 3

IR2104PBF

The IR2104PBF is a half bridge based mosfet driver with a supply voltage range of 10 to 20 volts and a maximum operating temperature of 125 degrees Celsius. It is available in a DIP-8 package and features a dual terminal position. The device is designed for use in automotive applications and has a number of functions. It has a width of 7.62mm and a length of 9.88mm.

Infineon
21 3

IR2104S

Half Bridge Based MOSFET Driver, 0.36A, CMOS, PDSO8, MS-012AA, SOIC-8

Infineon
25 4

IR2104STRPBF

Automotive-grade Half Bridge MOSFET Driver IC, featuring CMOS technology and an 8-terminal SOIC-8 package. Operates across a wide temperature range from -40°C to 125°C, with a nominal supply voltage of 15V (10V-20V range). This single-function interface IC is designed for efficient power management applications.

Infineon
19 3

IR2110PBF

Automotive-grade Half Bridge MOSFET Driver IC, featuring a 14-terminal PDIP package. Operates across a supply voltage range of 3.3V to 20V, with a nominal 15V. Delivers 2.5A current for efficient MOSFET switching. Designed for dual terminal configuration with a temperature grade suitable for automotive applications, operating from -40°C to 125°C.

Infineon
27 4

IR2110S

The IR2110S is a half bridge based MOSFET driver from Infineon, designed to operate within a temperature range of -40°C to 125°C. It features a supply voltage range of 3.3 to 20V and is available in the SOIC-16 package type. This device is suitable for use in automotive applications due to its temperature grade of AUTOMOTIVE. The IR2110S has 16 terminals and supports a single function, making it a versatile component for power management ICs.

Infineon
27 6

IR2110STRPBF

High-side and low-side MOSFET driver IC, featuring two independent channels for half-bridge applications. Delivers 2.5A peak output current with a 20V maximum output voltage. Operates across a wide temperature range of -40°C to 125°C, with a maximum power dissipation of 1.25W. Surface mountable in a 16-pin SOIC package, offering 150ns propagation delay and 10ns turn-on/off delay times. Lead-free and RoHS compliant.

International Rectifier
21 3

IR2113PBF

Automotive-grade Half Bridge MOSFET Driver IC, featuring a 2.5A output current capability. This integrated circuit operates with a supply voltage range of 3.3V to 20V, with a nominal 15V. Designed for high-side and low-side MOSFET control, it offers dual terminal positioning within a 14-pin PDIP package. Operating temperature range spans from -40°C to 125°C.

Infineon
21 2

IR2130PBF

Half Bridge Based MOSFET Driver, 0.5A, MOS, PDIP28, LEAD FREE, PLASTIC, MS-011AB, DIP-28

Infineon
21 5

IR2184PBF

The IR2184PBF is a half bridge based MOSFET driver from Infineon, designed for automotive applications. It operates within a temperature range of -40 to 125 degrees Celsius and has a nominal supply voltage of 15V. The device features 8 terminals and a DUAL terminal position. It is available in an 8-pin DIP package with dimensions of 7.62mm in width and 9.88mm in length.

Infineon
21 6

IR2184STRPBF

Automotive-grade half-bridge MOSFET driver IC, featuring a 15V nominal supply voltage (10V-20V range) and 2.3A output current. This CMOS interface IC is housed in an 8-terminal SOIC-8 (PDSO8) package with dual terminal positions. Operating across a -40°C to 125°C temperature range, it offers a single function for efficient power management.

Infineon
19 2

IRF1404

Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

International Rectifier
29 4

IRF1404PBF

The IRF1404PBF is a TO-220AB packaged MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 202A and a drain to source voltage of 40V. The device is RoHS compliant and has a maximum power dissipation of 333W.

International Rectifier
27 9

IRF2807

Power Field-Effect Transistor, 82A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

International Rectifier
24 4