Semiconductors

BAT46WS

Rectifier Diode, Schottky, 1 Element, 0.15A, 100V V(RRM), Silicon,

Surge Components
16

BAT54

Single, surface mount Schottky diode with a 30V DC rated voltage and 200mA forward current. Features a 200mA average rectified current, 600mA peak non-repetitive surge current, and 2µA maximum reverse leakage. This RoHS compliant component offers a 10pF capacitance and 5ns reverse recovery time, housed in a compact SOT-23 package. Operating temperature range spans from -55°C to 150°C.

Onsemi
16

BAT54A

DIODE ARRAY SCHOTTKY 30V SOT23-3

Onsemi
29 3

BAT54AW

Diode Schottky 30V 0.2A 3-Pin SOT-23 T/R

Vishay
29 5

BAT54C

Schottky diode array, surface mount, SOT-23 package. Features 30V reverse voltage, 200mA average rectified current, and 600mA peak non-repetitive surge current. Offers a low capacitance of 10pF and a fast 5ns reverse recovery time. Operates across a wide temperature range from -55°C to 150°C. RoHS compliant with tin-matte contact plating.

Onsemi
30 3

BAT54C,215

The BAT54C215 is a surface mount diode from NXP with a maximum operating temperature range of -65°C to 150°C. It has a maximum forward surge current of 600mA and a maximum reverse voltage of 30V. The diode's power dissipation is 230mW and its reverse recovery time is 5ns. The BAT54C215 is packaged in a TO-236-3 case and is lead free.

NXP
22 2

BAT54CW

Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

Diotec
32 4

BAT54S

Dual-element silicon signal diode for general-purpose rectification. Features a 30V repetitive reverse voltage rating and a 200mA forward current. Maximum forward surge current is 600mA, with a low reverse leakage current of 2uA. Operating temperature range spans from -65°C to 125°C. Packaged in a SOT-23 surface-mount plastic package, this RoHS compliant component offers a capacitance of 10pF and a reverse recovery time of 5ns.

Taiwan Semiconductor
16

BAT54SW

The BAT54SW is a general purpose rectifier diode from NXP, packaged in the SOT-323 case and suitable for surface mount applications. It can handle a maximum forward current of 200mA and a maximum repetitive reverse voltage of 30V. The diode has a maximum operating temperature of 150°C and a reverse recovery time of 5ns. The BAT54SW is compliant with RoHS and Reach SVHC regulations, making it suitable for use in environmentally friendly applications.

NXP
16

BAT54TW

Rectifier Diode, Schottky, 3 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6

Panjit
28 5

BAT54W

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

Panjit
25 3

BAT54WS

The BAT54WS is a dual silicon rectifier diode with a maximum operating temperature of 125°C and a minimum operating temperature of -55°C. It features a diode element material of SILICON and a diode type of RECTIFIER DIODE. The device has a maximum reverse voltage of 30V and is packaged in a R-PDSO-F2 package type.

Panjit
27 4

BAT54X

Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-2

Lite-On
18

BAT60B

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 10V V(RRM), Silicon, SOD-323, 2 PIN

Infineon
27 4

BAT720

DIODE, SCHOTTKY, SOT-23

NXP
16

BAT85

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DO-34

Nexperia
14

BAV21WS

This small-signal silicon diode is designed for surface-mount use in a SOD-323 plastic package. It supports a repetitive peak reverse voltage of 250 V and a continuous reverse voltage of 200 V, with a maximum average forward current of 200 mA. Forward voltage is specified below 1 V at 100 mA and below 1.25 V at 200 mA. The device provides low junction capacitance of 1.5 pF and a reverse recovery time below 50 ns. It is rated for junction temperatures up to 150°C and is supplied in taped-and-reeled standard packaging.

Diotec
28 4

BAV70

General purpose rectifier diode array in a SOT-23 surface mount package. Features a maximum repetitive reverse voltage of 70V and an average rectified current of 200mA. Offers a low capacitance of 1.5pF and a fast reverse recovery time of 6ns. Operates across a wide temperature range from -55°C to 150°C, with a peak non-repetitive surge current capability of 2A.

Onsemi
33 2

BAV99

Ultra-fast switching diode with 70V reverse voltage and 200mA average rectified current. Features 1.5pF capacitance and 6ns reverse recovery time. Packaged in a SOT-23 surface mount case with tin, matte contact plating. Operates from -55°C to 150°C with 350mW power dissipation. RoHS compliant and lead-free.

Onsemi
32 5

BAV99,215

High-speed switching rectifier diode designed for general-purpose applications. Features a maximum repetitive peak reverse voltage of 100V and a continuous forward current of 0.215A. Operates across a wide temperature range from -65°C to 150°C. Housed in a 3-pin SOT-23 (TO-236AB) package with dual terminal positions and two silicon diode elements. Maximum power dissipation is 0.25W.

Nexperia
26 7