Semiconductors
BAW56
Diode SOT-23 75 V, BAW56
BBU27-65E
Fuse Fast Acting 65A 27000V
BC3
CASE, HANDHELD, PP3, BLACK; Enclosure Type:Handheld; External Height - Metric:33mm; External Width - Metric:118mm; External Depth - Metric:66mm; Enclosure Material:ABS (Acrylonitrile Butadiene Styrene); Body Colour:Black; IP Rating:Not Rated; NEMA Rating:Not Rated; External Height - Imperial:1.3; External Width - Imperial:4.65; External Depth - Imperial:2.6; Product Range:-; SVHC:No SVHC (15-Jun-2015); Wall Thickness:2mm
BC327
PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a collector-emitter voltage (VCEO) of 45V and a maximum collector current of 800mA. Offers a transition frequency of 260MHz and a minimum hFE of 100. Operates across a wide temperature range from -55°C to 150°C. Through-hole mount design with lead-free and RoHS compliant construction.
BC327-40
Transistor TO-92 BL PNP -45 V PU=4000 ST, BC327-40, Diotec
BC337
NPN bipolar junction transistor in TO-92 package, featuring a 45V collector-emitter breakdown voltage and 800mA maximum collector current. Offers a 100MHz transition frequency and a minimum hFE of 100. Designed for through-hole mounting with a maximum power dissipation of 625mW. Operates across a wide temperature range from -55°C to 150°C.
BC337-40
Transistor TO-92 BL NPN 45 V 800 mA, BC337-40, Diotec
BC547
NPN bipolar junction transistor in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Offers a DC rated voltage of 45V, a transition frequency of 300MHz, and a minimum DC current gain (hFE) of 110. Maximum power dissipation is 500mW, with operating temperatures ranging from -65°C to 150°C.
BC547B
NPN Epitaxial Silicon Transistor, TO-92-3 package. Features 45V Collector Emitter Voltage (VCEO), 100mA Max Collector Current, and 300MHz Transition Frequency. Offers a minimum hFE of 200 and a Max Power Dissipation of 500mW. Operates across a temperature range of -65°C to 150°C. Through-hole mount with lead-free and RoHS compliant construction.
BC548
NPN bipolar junction transistor in TO-92 package. Features a 30V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates across a temperature range of -65°C to 150°C with a power dissipation of 500mW. Through-hole mounting for versatile integration.
BC548B
NPN Bipolar Junction Transistor (BJT) in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 30V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. Supplied in bulk packaging with 5000 units per box.
BC549
NPN Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 500mW. This RoHS compliant component is supplied in bulk packaging.
BC557
PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 45V collector-emitter voltage (VCEO) and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 150MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 500mW. Through-hole mounting and RoHS compliant.
BC557B
PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 45V collector-emitter voltage and 0.1A continuous collector current. Housed in a 3-pin TO-92 plastic package with formed leads for through-hole mounting. Offers a minimum DC current gain of 200 at 2mA and 5V, with a typical transition frequency of 150MHz. Operates across a wide temperature range from -55°C to 150°C.
BC558
PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-92 package. Features a maximum collector current of 100mA and a collector-emitter voltage of 30V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 150MHz. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 500mW. Lead-free and RoHS compliant.
BC558B
PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 30V collector-emitter voltage and 0.1A maximum collector current. This single-element transistor is housed in a 3-pin TO-92 plastic package with formed leads, suitable for through-hole mounting. It offers a minimum DC current gain of 200 at 2mA/5V and a typical transition frequency of 150MHz. Operating temperature range spans from -55°C to 150°C.
BC807-16
MULTICOMP BC807-16 Bipolar (BJT) Single Transistor, PNP, -45 V, 200 MHz, 300 mW, -500 mA, 100
BC807-25
The Diotec BC807-25 is a PNP bipolar junction transistor packaged in a surface mount SOT-23 package. It can withstand a collector-emitter voltage of up to 45V and an emitter-base voltage of up to 5V. The transistor operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 310mW. It is available in tape and reel packaging and is compliant with RoHS regulations.
BC807-40
The Diotec BC807-40 is a PNP bipolar junction transistor packaged in a surface mount SOT-23 package. It can withstand a collector-emitter voltage of up to 45V and has a maximum operating temperature range of -55°C to 150°C. The transistor has a power dissipation of 310mW and is RoHS compliant. It is suitable for high-frequency applications, with a frequency of up to 100MHz.
BC817-16
Transistor