Semiconductors
BC817-25
The BC817-25 is a 45V NPN transistor packaged in a SOT-23 case, suitable for operation up to 150°C. It can handle a maximum power dissipation of 300mW. This transistor is RoHS compliant but not SVHC compliant.
BC817-40
NPN bipolar junction transistor (BJT) for surface mount applications. Features a 45V collector-emitter breakdown voltage and a 500mA maximum collector current. Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 100MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 250mW. Packaged in a TO-236-3 (SOT-23) case, supplied on tape and reel.
BC846B
MULTICOMP BC846B Bipolar (BJT) Single Transistor, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 200
BC847B
The BC847B is a general-purpose NPN transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. It is packaged in a SOT-23 case and is suitable for surface-mount applications. The transistor has a maximum power dissipation of 250mW and can operate at temperatures up to 150°C. It is compliant with Reach SVHC regulations, although the exact status is unknown.
BC847BS
NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 45V collector-emitter voltage (VCEO) and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 250MHz. Packaged in a compact SC surface-mount case, this component operates across a wide temperature range from -55°C to 150°C. Supplied in a 3000-piece tape and reel.
BC847C
NEXPERIA - BC847C. - TRANSISTOR, NPN SOT-23
BC848B
The Diotec BC848B is a single NPN bipolar junction transistor packaged in a surface mount SOT-23 package. It can withstand collector base voltages of up to 30V and collector emitter voltages of up to 30V. The transistor has a maximum operating temperature range of -55°C to 150°C and a power dissipation of 250mW. It is available in tape and reel packaging and is compliant with RoHS regulations.
BC849B
The BC849B is a NPN bipolar junction transistor with a collector base voltage rating of 30V and an emitter base voltage rating of 6V. It has a collector emitter saturation voltage of 600mV and a maximum collector current of 100mA. The transistor is packaged in a small outline package with dimensions of 2.9mm in length and 1.3mm in width, and 1mm in height. It is rated for operation at temperatures up to 150°C and can handle a maximum power dissipation of 330mW. The BC849B is available on tape and reel for easy handling and assembly.
BC856B
NEXPERIA - BC856B. - TRANSISTOR, PNP SOT-23
BC857B
The Diotec BC857B is a surface mount PNP transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a power dissipation of 250mW and is packaged in a SOT-23 case. The transistor is RoHS compliant and has a frequency of 100MHz. It is suitable for use in high-frequency applications and can withstand collector base voltages of up to 50V, collector emitter voltages of up to 45V, and emitter base voltages of up to 5V.
BC857C
The Infineon BC857C is a PNP bipolar junction transistor with a collector base voltage of 50V and a maximum collector current of 100mA. It has a maximum operating frequency of 250MHz and a maximum power dissipation of 330mW. The transistor is packaged in a small outline R-PDSO-G3 package and is available on tape and reel. It has a height of 0.9mm, length of 2.9mm, and width of 1.3mm. The transistor is suitable for use in high-frequency applications and can operate at a maximum temperature of 150°C.
BC858B
MULTICOMP - BC858B - TRANSISTOR, PNP, 0.1A, 30V, SOT23
BC859B
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
BCP51-16
The BCP51-16 is a surface mount PNP transistor with a collector base voltage of 45V and a maximum collector current of 1A. It operates at a maximum frequency of 125MHz and has a maximum power dissipation of 2W. The transistor is packaged in a SOT-223 case and is RoHS compliant. It can withstand a maximum operating temperature of 150°C.
BCP53-16
The BCP53-16 is a PNP transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. It features a gain bandwidth product of 50MHz and a transition frequency of 50MHz. The transistor is packaged in a surface-mount SOT-223 package and is rated for operation over the -65°C to 150°C temperature range. It is suitable for use in a variety of applications, including general-purpose switching and amplification.
BCP55-16
Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin
BCP56-16
NPN Bipolar Junction Transistor (BJT) for low-power applications. Features an 80V Collector-Emitter Voltage (VCEO) and 1A Max Collector Current. Offers a 500mV Collector-Emitter Saturation Voltage and 40 minimum hFE. Packaged in a SOT-223 surface-mount case, this RoHS compliant component operates from -65°C to 150°C with 1.6W power dissipation.
BCX53-16
MULTICOMP - BCX53-16 - TRANSISTOR, PNP, 1A, 80V, SOT89
BCX55-16
MULTICOMP - BCX55-16 - TRANSISTOR, NPN, 1A, 60V, SOT89
BCX56-10
Small Signal Bipolar Transistor,