Galaxy Microelectronics

2SA812

General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC (A): 0.1A; HFE Min: 90; HFE Max: 600; VCE (V): 6V; IC (mA): 1mA; VCE(SAT) (V): 0.3V; IC (mA)1: 100mA; IB (mA): 10mA; FT Min (MHz): 180 MHz; PTM Max (W): 0.2W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23

Semiconductors
19

2SC2412

General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC (A): 0.15A; HFE Min: 120; HFE Max: 560; VCE (V): 6V; IC (mA): 1mA; VCE(SAT) (V): 0.4V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 180+ MHz; PTM Max (W): 0.2W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23

Semiconductors
17

2SC3356

General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 12V; IC (A): 0.1A; HFE Min: 50; HFE Max: 300; VCE (V): 10V; IC (mA): 20mA; FT Min (MHz): 6000 MHz; PTM Max (W): 0.2W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23

Semiconductors
11

2SD1898

General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 80V; IC (A): 1A; HFE Min: 82; HFE Max: 390; VCE (V): 3V; IC (mA): 500mA; VCE(SAT) (V): 0.4V; IC (mA)1: 500mA; IB (mA): 20mA; FT Min (MHz): 100+ MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89

Semiconductors
20

2SD965A

General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 30V; IC (A): 5A; HFE Min: 230; HFE Max: 800; VCE (V): 2V; IC (mA): 500mA; VCE(SAT) (V): 1V; IC (mA)1: 3000mA; IB (mA): 100mA; FT Min (MHz): 150+ MHz; PTM Max (W): 0.75W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89

Semiconductors
16

BSS84W

Small Signal MOSFET; Channel Polarity: P channel; PD Max (W): 0.2W; V(BR)DSS Min (V): -50V; ID Max (A): -0.13A; RDS(ON) Max (Ω): 10 Ohm; ID (A): 0.1A; VGS (V): -5V; ID (mA): -100mA; GFS Min (S): 0.05 S; VDS (V): -25V; ID (A) 1: 0.1A; Package: SOT-323

Semiconductors
14

D882

Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,

Semiconductors
19

D882H

Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,

Semiconductors
16

ES2JB

Super Fast Recovery Rectifier, VRRM MAX (V): 600V; IAV MAX (A): 2A; VFM MAX (V): 1.7V; @ IF (A): 2A; IFSM MAX (A): 50A; IR MAX (UA): 5uA; @VR (V): 600V; TRR MAX (NS): 35ns; Package: SMBF

Semiconductors
16

MJE2955

Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 60V; IC (A): 10A; HFE Min: 20; HFE Max: 100; VCE (V): 4V; IC (mA): 4000mA; VCE(SAT) (V): 8V; IC (mA)1: 10000mA; IB (mA): 3300mA; FT Min (MHz): 2 MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB

Semiconductors
18

PXT8050

General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 25V; IC (A): 1.5A; HFE Min: 120; HFE Max: 400; VCE (V): 1V; IC (mA): 100mA; VCE(SAT) (V): 0.5V; IC (mA)1: 800mA; IB (mA): 80mA; FT Min (MHz): 100 MHz; PTM Max (W): 1W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89

Semiconductors
16

RB520S-30

Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 30V; IAV Max (A): 0.2; VFM Max (V): 0.6V; @ IF (A): 0.2A; IR Max (uA): 1uA; @VR (V): 10V; Pin: F1; Package: SOD-523

Semiconductors
20

RB751V-40

Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 30V; IAV Max (A): 0.03; VFM Max (V): 0.37V; @ IF (A): 0.001A; IR Max (uA): 0.5uA; @VR (V): 30V; Pin: F1; Package: SOD-323

Semiconductors
17

SS210F

Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 100V; IAV Max (A): 2A; VFM Max (V): 0.85V; @ IF (A): 2A; IFSM Max (A): 50A; IR Max (uA): 250uA; @VR (V): 100V; Package: SMAF

Semiconductors
19

SS22B

Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 20V; IAV Max (A): 2A; VFM Max (V): 0.5V; @ IF (A): 2A; IFSM Max (A): 50A; IR Max (uA): 500uA; @VR (V): 20V; Package: SMBF

Semiconductors
16

SS24B

Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 40V; IAV Max (A): 2A; VFM Max (V): 0.5V; @ IF (A): 2A; IFSM Max (A): 50A; IR Max (uA): 500uA; @VR (V): 40V; Package: SMBF

Semiconductors
19

SS310B

Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 100V; IAV Max (A): 3A; VFM Max (V): 0.85V; @ IF (A): 3A; IFSM Max (A): 80A; IR Max (uA): 250uA; @VR (V): 100V; Package: SMB

Semiconductors
19

SS34BF

Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 40V; IAV Max (A): 3A; VFM Max (V): 0.5V; @ IF (A): 3A; IFSM Max (A): 80A; IR Max (uA): 500uA; @VR (V): 40V; Package: SMBF

Semiconductors
18

SS38B

Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 80V; IAV Max (A): 3A; VFM Max (V): 0.85V; @ IF (A): 3A; IFSM Max (A): 80A; IR Max (uA): 250uA; @VR (V): 80V; Package: SMBF

Semiconductors
16

SS510C

Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 100V; IAV Max (A): 5A; VFM Max (V): 0.85V; @ IF (A): 5A; IFSM Max (A): 150A; IR Max (uA): 250uA; @VR (V): 100V; Package: SMC

Semiconductors
16